Datasheet > S4111_15

S4111_15

更新时间： 2024-11-03 01:24:35

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描述
Si photodiode arrays

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S4111_15 数据手册

Si photodiode arrays

S4111/S4114 series

16, 35, 46 element Si photodiode array for UV

to NIR

The S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode ar-

rays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV

to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, the S4111/S4114 series

are able to detect low level light with high sensitivity. Crosstalk between elements is minimized to maintain signal purity. Spe-

cial ﬁlters can be attached as the input window (custom order products).

Features

Applications

Large photosensitive area

Low crosstalk

Multichannel spectrophotometers

Color analyzers

S4111 series: Enhanced infrared sensitivity,

low dark current

S4114 series: IR sensitivity suppressed type,

low terminal capacitance,

Light spectrum analyzers

Light position detection

high-speed response

Structure / Absolute maximum ratings

Absolute maximum ratings

Photosensitive Between Between

area elements elements

(per 1 element) measure pitch

Reverse

voltage

VR max

Operating

temperature temperature

Storage

Package

Window

material

Number

elements

Type no.

Topr

(°C)

Tstg

(°C)

Size

Effective area

(mm)

(mm) (mm²) (mm) (mm)

(V)

S4111-16R

S4111-16Q*

S4111-35Q*

S4111-46Q*

S4114-35Q*

S4114-46Q*

Resin potting

18 pin DIP 1.45 × 0.9 1.305

40 pin DIP

0.1

1.0

-20 to +60 -20 to +80

Quartz

48 pin DIP

40 pin DIP

4.4 × 0.9 3.96

48 pin DIP

* Refer to “Precautions against UV light exposure.”

Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings

is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute

maximum ratings.

Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)

Dark

current

Shunt

resistance

Rsh

Rise time

Terminal

capacitance

Peak

sensitivity

wavelength

λp

Spectral

response

range

Photosensitivity

NEP

λ=λp

RL=1 kΩ

Type no.

Max.

=10 mV VR=10 V

(pA) (pA)

λ=655 nm

VR=10 mV

λp

200 nm 633 nm

VR=0 V VR=10 V VR=0 V VR=10 V VR=0 V VR=10 V

Min

Typ.

(μs)

(μs) (W/Hz^1/2) (W/Hz^1/2

)

(GΩ) (GΩ)

(nm)

(pF) (pF)

(A/W) (A/W) (A/W)

S4111-16R

S4111-16Q

S4111-35Q

S4111-46Q

S4114-35Q

S4114-46Q

0.39

0.43

340 to 1100

2.0

1.0

250

200

550

120

0.5

0.1 4.4 × 10^-161.7 × 10^-15

0.3 1.3 × 10^-153.1 × 10^-15

0.05 5.7 × 10^-158.0 × 10^-15

0.08

960

0.58

0.50

190 to 1100

190 to 1000

1.2

0.1

0.08

0.43

800

300

0.15

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与S4111_15相关器件

型号	品牌	获取价格	描述	数据表
S4111-14R	HAMAMATSU	获取价格	Photo Diode, CERAMIC, DIP
S4111-16Q	HAMAMATSU	获取价格	Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111-16R	HAMAMATSU	获取价格	Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S41111PINBASE	ETC	获取价格	RELAIS SOCKEL 170 290 11POL
S4111-35Q	HAMAMATSU	获取价格	Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111-46Q	HAMAMATSU	获取价格	Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S41-1210	ETC	获取价格	HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
S4112-38Q	HAMAMATSU	获取价格	Optoelectronic Device
S4112-46Q	HAMAMATSU	获取价格	Optoelectronic Device
S4113	HAMAMATSU	获取价格	Photo Diode, CERAMIC, DIP

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