是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CERAMIC, DIP-48 | Reach Compliance Code: | unknown |
HTS代码: | 8541.40.60.50 | 风险等级: | 5.58 |
配置: | 2 BANKS, COMMON CATHODE, 23 ELEMENTS | 最大暗电源: | 0.05 nA |
红外线范围: | YES | 安装特点: | THROUGH HOLE MOUNT |
功能数量: | 1 | 最高工作温度: | 60 °C |
最低工作温度: | -20 °C | 峰值波长: | 960 nm |
最长响应时间: | 3e-7 s | 最小反向击穿电压: | 15 V |
形状: | RECTANGULAR | 尺寸: | 45.9 mm |
子类别: | Photo Diodes | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S41-1210 | ETC |
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HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC | |
S4112-38Q | HAMAMATSU |
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Optoelectronic Device | |
S4112-46Q | HAMAMATSU |
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Optoelectronic Device | |
S4113 | HAMAMATSU |
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Photo Diode, CERAMIC, DIP | |
S4113-38Q | HAMAMATSU |
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Optoelectronic Device | |
S4113-46Q | HAMAMATSU |
获取价格 |
Optoelectronic Device | |
S4114 | HAMAMATSU |
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Photo Diode, CERAMIC, DIP | |
S4114-35Q | HAMAMATSU |
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Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR | |
S4114-38Q | HAMAMATSU |
获取价格 |
Optoelectronic Device | |
S4114-46Q | HAMAMATSU |
获取价格 |
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR |