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S3A-E3 PDF预览

S3A-E3

更新时间: 2024-10-29 19:45:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 80K
描述
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode

S3A-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:2.5 µs表面贴装:YES
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

S3A-E3 数据手册

 浏览型号S3A-E3的Datasheet PDF文件第2页浏览型号S3A-E3的Datasheet PDF文件第3页浏览型号S3A-E3的Datasheet PDF文件第4页 
S3A thru S3M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AB (SMC)  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of  
power  
supplies,  
inverters,  
converters  
and  
PRIMARY CHARACTERISTICS  
freewheeling diodes for consumer, automotive and  
telecommunication.  
IF(AV)  
3.0 A  
VRRM  
IFSM  
IR  
50 V to 1000 V  
100 A  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
10 µA  
VF  
1.15 V  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL S3A  
S3B  
SB  
S3D  
SD  
S3G  
SG  
S3J  
SJ  
S3K  
SK  
S3M UNIT  
Device marking code  
SA  
SM  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
3.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL= 103 °C  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 88713  
Revision: 08-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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