Datasheet > S3AF

S3AF

更新时间： 2024-10-30 01:26:23

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		/
页数	文件大小	规格书
2页	438K
描述
Surface Mount General Purpose Silicon Rectifiers

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S3AF 数据手册

S3AF THRU S3MF

Surface Mount General Purpose Silicon Rectifiers

星合子

XINGHE ELECTRONICS

Reverse Voltage - 50 to 1000 V

Forward Current - 3 A

SMAF

FEATURES

Cathode Band

Top View

• For surface mounted applications

• Low profile package

0.110(2.80)

0.094(2.40)

0.059(1.50)

0.051(1.30)

• Glass Passivated Chip Juntion

• Easy to pick and place

0.150(3.80)

0.128(3.25)

• Lead free in comply with EU RoHS 2011/65/EU directives

0.012(0.30)

0.006(0.15)

0.055(1.40)

0.035(0.90)

0.047(1.20)

0.028(0.70)

MECHANICAL DATA

• ase: SMAF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 27mg 0.00086oz

0.199(5.05)

0.179(4.40)

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

Symbols

V_RRM

S3AF

S3BF

100

S3DF

200

140

200

S3GF

400

280

400

S3JF

600

420

600

S3KF

800

560

800

S3MF

1000

700

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Units

V_RMS

Maximum DC Blocking Voltage

V_DC

100

1000

Maximum Average Forward Rectified Current

at Ta = 65 °C

I_F(AV)

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

100

1.2

Maximum Instantaneous Forward Voltage at 3 A

V_F

I_R

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

Ta =125 °C

250

μA

1）

Typical Junction Capacitance

C_j

°C/W

°C

2）

Typical Thermal Resistance

R_θJA

Operating and Storage Temperature Range

T_j, T_stg

-55 ~ +150

1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

2）Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted

GAOMI XINGHE ELECTRONICS CO.,LTD.

WWW.SDDZG.COM

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