是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | LBGA, BGA81,9X9,40 |
针数: | 81 | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.9 |
应用程序: | SONET | JESD-30 代码: | S-PBGA-B81 |
JESD-609代码: | e0 | 长度: | 10 mm |
功能数量: | 1 | 端子数量: | 81 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LBGA |
封装等效代码: | BGA81,9X9,40 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, LOW PROFILE | 电源: | 3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.7 mm |
子类别: | ATM/SONET/SDH ICs | 最大压摆率: | 285 mA |
标称供电电压: | 3.3 V | 表面贴装: | YES |
技术: | BICMOS | 电信集成电路类型: | ATM/SONET/SDH CLOCK RECOVERY CIRCUIT |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 宽度: | 10 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S307A2 | HUTSON |
获取价格 |
Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element | |
S307B1 | HUTSON |
获取价格 |
Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element | |
S307B2 | HUTSON |
获取价格 |
Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element | |
S307F1 | HUTSON |
获取价格 |
Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, | |
S308 | NKK |
获取价格 |
Medium/High Capacity Standard Size Toggles | |
S3083QT | AMCC |
获取价格 |
Transmitter, 1-Func, Bipolar, PQFP80, HEAT SINK, PLASTIC, QFP-80 | |
S3083QT | ROCHESTER |
获取价格 |
TRANSMITTER, PQFP80, HEAT SINK, PLASTIC, QFP-80 | |
S3083QT-80 | AMCC |
获取价格 |
Telecom IC | |
S3086TT11 | AMCC |
获取价格 |
Clock Recovery Circuit, 1-Func, BICMOS, PQFP48, TQFP-48 | |
S308T | NKK |
获取价格 |
Medium/High Capacity Standard Size Toggles |