Datasheet > S2N7002K

S2N7002K

更新时间： 2024-11-01 06:09:47

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	1009K
描述
115mA, 60V N-Channel Enhancement Mode Power MOSFET

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技术参数
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S2N7002K 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

S2N7002K 数据手册

S2N7002K

115mA, 60V

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

SOT-23

Top View

C B

FEATURES

3 DRAIN

ꢀ

Low on resistance.

Fast switching speed.

Low-voltage drive.

Easily designed drive circuits.

Easy to parallel.

Pb-Free package is available.

ESD protected:2000V

GATE

* Gate

Pretection

Diode

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

2.70

2.10

1.20

0.89

1.78

0.30

3.04

2.80

1.60

1.40

2.04

0.50

0.18

0.60

0.20

SOURCE

0.40

0.08

0.6 REF.

0.85

1.15

DEVICE MARKING: RK

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Drain – Source Voltage

SYMBOL

RATING

UNIT

V_DSS

V_GSS

I_D

Gate – Source Voltage

±20

Continuous

Pulsed

115

Drain Current

I_DP

0.8

Continuous

Pulsed

I_DR

115

Drain Reverse Current

I_DRP

0.8

Total Power Dissipation

P_D

225

°C

Channel & Storage Temperature

T_CH, T_STG

150, -55~150

Note: 1. Pulse width ≦10µS, Duty cycle≦1%.

2. When mounted on 1x0.75x0.062 inch glass epoxy board.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

Gate-Source Leakage Current

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

SYMBOL

I_GSS

MIN

TYP

MAX

±10

UNIT

µA

TEST CONDITION

V_GS=±20V, V_DS=0V

V_(BR)DSS

I_DSS

V_GS=0V, I_D=10µA

V_DS=60V, V_GS=0V

V_DS= V_GS,I_D=250µA

V_GS=10V, I_D=0.5A

V_GS=5V, I_D=0.05A

V_DS=10V, I_D=0.2A

V_DS=25V

µA

V_GS(TH)

1.85

2.5

7.5

Drain-Source On-State Resistance*

R_DS(ON)

Ω

Forward Transfer Admittance

Input Capacitance

|Y_FS|*

C_ISS

3.0

5.0

V_GS=0V

Output Capacitance

C_OSS

C_RSS

f=1MHz

Reverse Transfer Capacitance

Turn-on Delay Time

T_d(ON)

_DD≒30V, V _Gs=10V

I _D=200mA, R_L=150Ω, R_GS=10Ω

Turn-off Delay Time

T_d(OFF)

* Pulse width ≦300µS, Duty cycle≦1%

SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT

08-Mar-2010 Rev. B

Page 1 of 3

12 3

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