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S2N7002K PDF预览

S2N7002K

更新时间: 2024-11-19 06:09:47
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
3页 1009K
描述
115mA, 60V N-Channel Enhancement Mode Power MOSFET

S2N7002K 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.58Base Number Matches:1

S2N7002K 数据手册

 浏览型号S2N7002K的Datasheet PDF文件第2页浏览型号S2N7002K的Datasheet PDF文件第3页 
S2N7002K  
115mA, 60V  
N-Channel Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A Suffix of “-C” specifies halogen & lead-free  
SOT-23  
A
L
3
3
Top View  
E
C B  
FEATURES  
1
1
2
3 DRAIN  
2
Low on resistance.  
Fast switching speed.  
Low-voltage drive.  
Easily designed drive circuits.  
Easy to parallel.  
Pb-Free package is available.  
ESD protected:2000V  
K
D
1
H
J
F
G
GATE  
*
* Gate  
Pretection  
Diode  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
A
B
C
D
E
F
2.70  
2.10  
1.20  
0.89  
1.78  
0.30  
3.04  
2.80  
1.60  
1.40  
2.04  
0.50  
G
H
J
K
L
-
0.18  
0.60  
0.20  
2
SOURCE  
0.40  
0.08  
0.6 REF.  
0.85  
1.15  
DEVICE MARKING: RK  
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
PARAMETER  
Drain – Source Voltage  
SYMBOL  
RATING  
UNIT  
V
VDSS  
VGSS  
ID  
60  
Gate – Source Voltage  
±20  
V
Continuous  
Pulsed  
115  
mA  
A
Drain Current  
1
IDP  
0.8  
Continuous  
Pulsed  
IDR  
115  
mA  
A
Drain Reverse Current  
1
IDRP  
0.8  
2
Total Power Dissipation  
PD  
225  
mW  
°C  
Channel & Storage Temperature  
TCH, TSTG  
150, -55~150  
Note: 1. Pulse width 10µS, Duty cycle1%.  
2. When mounted on 1x0.75x0.062 inch glass epoxy board.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
PARAMETER  
Gate-Source Leakage Current  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Threshold Voltage  
SYMBOL  
IGSS  
MIN  
TYP  
-
MAX  
±10  
-
UNIT  
µA  
V
TEST CONDITION  
VGS=±20V, VDS=0V  
-
60  
-
V(BR)DSS  
IDSS  
-
VGS=0V, ID =10µA  
VDS=60V, VGS=0V  
VDS= VGS, ID =250µA  
VGS=10V, ID=0.5A  
VGS=5V, ID=0.05A  
VDS=10V, ID=0.2A  
VDS=25V  
-
1
µA  
V
VGS(TH)  
1
-
1.85  
-
2.5  
7.5  
7.5  
-
Drain-Source On-State Resistance*  
RDS(ON)  
*
-
-
Forward Transfer Admittance  
Input Capacitance  
|YFS|*  
CISS  
80  
-
-
mS  
25  
10  
3.0  
12  
20  
50  
25  
5.0  
20  
30  
pF  
nS  
VGS=0V  
Output Capacitance  
COSS  
CRSS  
-
f=1MHz  
Reverse Transfer Capacitance  
Turn-on Delay Time  
-
Td(ON)  
*
-
V
DD30V, V Gs=10V  
I D=200mA, RL=150, RGS=10Ω  
Turn-off Delay Time  
Td(OFF)  
*
-
* Pulse width 300µS, Duty cycle1%  
SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT  
08-Mar-2010 Rev. B  
Page 1 of 3  

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