Datasheet > S2N7002KT

S2N7002KT

更新时间： 2024-11-23 09:10:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	465K
描述
N-Channel Enhancement MOSFET

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技术参数
数据手册

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S2N7002KT 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

S2N7002KT 数据手册

S2N7002KT

N-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-523

FEATURES



Low Gate Charge for Fast Switching.

ESD Protected Gate.

APPLICATIONS



Power Management Load Switch

Portable Applications such as Cell Phones, Media Players,

Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.

PACKAGE INFORMATION

Millimeter

REF.

Min.

1.50

0.75

0.60

0.23

Max.

1.70

0.95

0.80

0.33

Min.

Max.

0.30

---

0.50

1.50

1.70

0.50BSC

0.10

0.20

MAXIMUM RATINGS (T_A=25℃ unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±10

Continuous Drain Current

Pulsed Drain Current

154

°C

tp≦10μs

I_DM

618

Continuous Source Current (Body Diode)

Total Power Dissipation

I_SD

154

P_D

300

Operating Junction Temperature Range

Operating Storage Temperature Range

T_J

150

T_STG

-55~150

°C

Note 1. Surface—mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

DEVICE MARKING

S2N7002KT = T6

09-Apr-2010 Rev. A

Page 1 of 4

12 3 4

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