Datasheet > S2KTR

S2KTR

更新时间： 2024-11-12 22:57:23

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描述
DIODE GEN PURP 800V 2A SMB

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中文翻译

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数据手册

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S2KTR 数据手册

S2A-S2M

Technical Data

Data Sheet N0562, Rev. A

S2A THRU S2M

2.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Features



Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

Classification Rating 94V-0



This is a Halogen Free Device

All SMC parts are traceable to the wafer lot

Additional testing can be offered upon request

SMB

Circuit Diagram

Mechanical Data



Case: SMB molded plastic body

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026



Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.09 grams

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Type Number

Symbol S2A

S2B

S2D

S2G

S2J

S2K

S2M

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

200

140

400

600

420

800

560

1000

700

Maximum RMS voltage

V_RMS

280

2.0

Average Rectified Output Current

@T_L= 110°C

I_O

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I_FSM

Forward Voltage

@ I_F= 2.0 A

@T_A= 25°C

V_F

1.10

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 125°C

5.0

200

I_RM

μA

Reverse Recovery Time(Note1)

t_rr

2.5

μS

Typical Junction Capacitance(Note2)

C_J

Typical Thermal Resistance Junction

to Lead (Note 3)

R_θJL

°C/W

°C

Operating and Storage Temperature Range

T_J,T_STG

-55 to +150

Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Mounted on P.C.B.with 8.0mm² land areas.

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

12 3 4

中文翻译

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