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S2KW

更新时间： 2024-10-30 01:25:51
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
3页 724K
描述
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

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中文翻译

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S2KW 数据手册

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S2AW THRU S2MW  
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere  
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER  
SOD-123FL  
Features  
Glass passivated device  
0.075(1.90)  
0.067(1.70)  
0.031 (0.08)  
0.043 (1.10)  
Ideal for surface mouted applications  
Low reverse leakage  
Metallurgically bonded construction  
High temperature soldering guaranteed:  
250°C/10 seconds,0.375”(9.5mm) lead length, 5  
lbs. (2.3kg) tension  
0.114(2.90)  
0.102(2.60)  
0.043(1.10)  
0.035(0.90)  
0.008(0.20)  
0.005(0.12)  
0.035(0.90)  
0.028(0.70)  
0.154(3.90)  
0.141(3.60)  
Mechanical Data  
Cas e : JEDEC SOD-123FL molded plastic body  
Terminals : Solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Mounting Pos ition : Any  
Dimensions in inches and (millimeters)  
Weight  
: 0.0007 ounce, 0.02 grams  
Maximum Ratings And Electrical Characteristics  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
S2AW S2BW S2DW S2GW S2JW  
S2KW S2MW  
Parameter  
SYMBOLS  
UNITS  
MDD  
2D1  
MDD  
2D2  
MDD  
2D3  
MDD  
2D4  
MDD  
2D5  
MDD  
2D6  
MDD  
2D7  
Marking Code  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
RMM  
RMS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
100  
1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
at TL(see fig.1)  
I
(AV)  
2.0  
A
Peak forward surge current  
50  
I
FSM  
8.3ms single half sine-wave  
A
V
superimposed onrated load (JEDEC Method)  
Maximum instantaneous forward voltage at 2.0A  
V
F
1.1  
10  
50  
Maximum DCreverse current  
at rated DCblocking voltage  
T
A
=25  
℃
I
R
mA  
pF  
TA=125℃  
30  
Typical junction capacitance (NOTE 1)  
Typical thermal resistance (NOTE 2)  
Operating junction temperature range  
C
J
90.0  
℃/  
W
R
JA  
J
-55 to +125  
-55 to +150  
℃
℃
T
Storage temperature range  
T
STG  
Note: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.  
2.P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
.
3 The typical data above is for reference only.  
DN:T19705A0  
https://www.microdiode.com  
Rev:2019A0  
Page :1  
123

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