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S29XS256RABBHW300 PDF预览

S29XS256RABBHW300

更新时间： 2024-02-01 13:10:17
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路
页数 文件大小 规格书
71页 2815K
描述
Flash, 16X16, PBGA44, 6.20 X 7.70 MM, LEAD FREE AND HALOGEN FREE, FPBGA-44

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S29XS256RABBHW300 技术参数

生命周期：Transferred零件包装代码：BGA
包装说明：VFBGA,针数：44
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.74
JESD-30 代码：R-PBGA-B44长度：7.7 mm
内存密度：256 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
端子数量：44字数：16 words
字数代码：16工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-25 °C
组织：16X16封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
编程电压：1.8 V认证状态：Not Qualified
座面最大高度：1 mm最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子形式：BALL
端子节距：0.5 mm端子位置：BOTTOM
宽度：6.2 mm

S29XS256RABBHW300 数据手册

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S29VS/XS-R MirrorBit® Flash Family  
S29VS256R, S29VS128R, S29XS256R, S29XS128R  
256/128 Mb (16/8 M x 16 bit)  
1.8 V Burst Simultaneous Read/Write,  
Multiplexed MirrorBit Flash Memory  
Data Sheet (Advance Information)  
Features  
„ Single 1.8 V read/program/erase (1.70–1.95 V)  
„ 65 nm MirrorBit Technology  
„ 10-year data retention (typical)  
„ Cycling Endurance: 100,000 cycles per sector (typical)  
„ RDY output indicates data available to system  
„ Command set compatible with JEDEC (42.4) standard  
„ Hardware sector protection via VPP pin  
„ Address and Data Interface Options  
– Address and Data Multiplexed for reduced I/O count  
(ADM) S29VS-R  
– Address-High, Address-Low, Data Multiplexed for minimum I/O  
count (AADM) S29XS-R  
„ Handshaking by monitoring RDY  
„ Offered Packages  
„ Simultaneous Read/Write operation  
„ 32-word Write Buffer  
– 44-ball FBGA (6.2 mm x 7.7 mm x 1.0 mm)  
„ Low VCC write inhibit  
„ Bank architecture  
„ Write operation status bits indicate program and erase  
– Eight-bank (VS256/128R)  
operation completion  
„ Four 32-KB sectors at the top or bottom of memory array  
„ Suspend and Resume commands for Program and Erase  
(VS256/128R)  
operations  
„ 255/127 of 128-KB sectors (VS256/128R)  
„ Asynchronous program operation, independent of burst  
„ Programmable linear (8/16) with wrap around and continuous  
control register settings  
burst read modes  
„ VPP input pin to reduce factory programming time  
„ Support for Common Flash Interface (CFI)  
„ Secured Silicon Sector region consisting of 128 words each  
for factory and customer  
General Description  
The Spansion S29VS256/128R and S29XS256/128R are MirrorBit® Flash products fabricated on 65 nm process technology.  
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two  
separate banks using multiplexed data and address pins. These products can operate up to 108 MHz and use a single VCC of  
1.7 V to 1.95 V that makes them ideal for the demanding wireless applications of today that require higher density, better  
performance, and lowered power consumption. The S29VS256/128R operates in ADM mode, while the S29XS256/128R can  
operate in the AADM mode.  
Performance Characteristics  
Read Access Times  
Current Consumption (typical values)  
Continuous Burst Read @ 108 MHz  
Speed Option (MHz)  
108  
75  
32 mA  
50 mA  
20 mA  
20 µA  
Max. Synch. Latency, ns (t  
Simultaneous Operation @ 66 MHz  
Program/Erase  
IACC)  
Max. Synch. Burst Access, ns (t  
7.6  
80  
BACC)  
Max. Asynch. Access Time, ns (t  
)
Standby Mode  
ACC  
Max OE# Access Time, ns (t  
)
15  
OE  
Typical Program & Erase Times  
Single Word Programming  
Effective Write Buffer Programming (V ) Per Word  
130 µs  
9.4 µs  
CC  
Effective Write Buffer Programming (V ) Per Word  
PP  
4.8 µs  
Sector Erase (16 Kword Sector)  
Sector Erase (64 Kword Sector)  
350 ms  
600 ms  
Publication Number S29VS_XS-R_00  
Revision 04  
Issue Date March 10, 2009  
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in  
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.  
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