Discr ete P OWER & Sign a l
Tech n ologies
S2A - S2M
0.185 (4.699)
0.160 (4.064)
0.083 (2.108)
0.075 (1.905)
Features
0.155 (3.937)
0.130 (3.302)
2
1
• Easy pick and place.
• Low forward Voltage Drop.
• High Current Capability.
• High Surge Current Capability.
0.220 (5.588)
0.200 (5.080)
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
0.096 (2.438)
0.083 (2.108)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.050 (1.270)
0.030 (0.762)
1.5 Ampere Glass Passivated Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
@ TA = 100°C
1.5
A
Peak Forward Surge Current
if(surge)
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case **
50
A
PD
2.35
18.8
16
W
mW/°C
°C/W
RθJC
Tstg
TJ
Storage Temperature Range
-65 to +150
-65 to +150
°C
°C
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
2A
50
35
50
2B
100
70
2D
200
140
200
2G
400
280
400
2J
2K
2M
1000
700
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
600
420
600
800
560
800
V
V
V
100
1000
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
1.0
125
µA
µA
V
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage @ 1.5 A
1.15
2.0
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
µS
30
pF
S2A-S2M, Rev. A
1999 Fairchild Semiconductor Corporation