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S29GL256N80TAI013

更新时间： 2024-11-05 22:59:03
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
110页 1430K
描述
MirrorBit Flash Family

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中文翻译

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S29GL256N80TAI013 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：not_compliant风险等级：5.92
最长访问时间：80 ns备用内存宽度：8
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G56
JESD-609代码：e0内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3部门数/规模：256
端子数量：56字数：16777216 words
字数代码：16000000最高工作温度：85 °C
最低工作温度：-40 °C组织：16MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP56,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小：8/16 words
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：128K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.07 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
类型：NOR TYPE

S29GL256N80TAI013 数据手册

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S29GLxxxN MirrorBitTM Flash Family  
S29GL512N, S29GL256N, S29GL128N  
512 Megabit, 256 Megabit, and 128 Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
110 nm MirrorBit process technology  
ADVANCE  
INFORMATION  
Datasheet  
Distinctive Characteristics  
Architectural Advantages  
Software & Hardware Features  
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
„
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— Unlock Bypass Program command reduces overall  
multiple-word or byte programming time  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
Enhanced VersatileI/O™ control  
— All input levels (address, control, and DQ input levels)  
and outputs are determined by voltage on V input.  
IO  
V
range is 1.65 to V  
IO  
CC  
„
„
Manufactured on 110 nm MirrorBit process  
technology  
SecSi™ (Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
„
Hardware features  
— Advanced Sector Protection  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
— May be programmed and locked at the factory or by  
the customer  
„
Flexible sector architecture  
— S29GL512N: Five hundred twelve 64 Kword (128  
Kbyte) sectors  
— S29GL256N: Two hundred fifty-six 64 Kword (128  
Kbyte) sectors  
— S29GL128N: One hundred twenty-eight 64 Kword  
(128 Kbyte) sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
„
„
100,000 erase cycles per sector typical  
20-year data retention typical  
Performance Characteristics  
„
High performance  
— 80 ns access time (S29GL128N, S29GL256N),  
90 ns access time (S29GL512N)  
— 8-word/16-byte page read buffer  
— 25 ns page read times  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 25 mA typical active read current;  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
„
„
Package options  
— 56-pin TSOP  
— 64-ball Fortified BGA  
Publication Number 27631 Revision A Amendment 4 Issue Date May 13, 2004  
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the  
right to change or discontinue work on this proposed product without notice.  
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