5秒后页面跳转
S29GL256N90FAI002 PDF预览

S29GL256N90FAI002

更新时间: 2024-11-06 14:13:07
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
126页 2869K
描述
Flash, 16MX16, 90ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-64

S29GL256N90FAI002 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:BGA包装说明:13 X 11 MM, 1 MM PITCH, FBGA-64
针数:64Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.71Is Samacsys:N
最长访问时间:90 ns备用内存宽度:8
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B64JESD-609代码:e0
长度:13 mm内存密度:268435456 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:256端子数量:64
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE页面大小:8/16 words
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:1.8,3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.4 mm部门规模:128K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:11 mmBase Number Matches:1

S29GL256N90FAI002 数据手册

 浏览型号S29GL256N90FAI002的Datasheet PDF文件第2页浏览型号S29GL256N90FAI002的Datasheet PDF文件第3页浏览型号S29GL256N90FAI002的Datasheet PDF文件第4页浏览型号S29GL256N90FAI002的Datasheet PDF文件第5页浏览型号S29GL256N90FAI002的Datasheet PDF文件第6页浏览型号S29GL256N90FAI002的Datasheet PDF文件第7页 
S29GLxxxN MirrorBitTM Flash Family  
S29GL512N, S29GL256N, S29GL128N  
512 Megabit, 256 Megabit, and 128 Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
110 nm MirrorBit process technology  
ADVANCE  
INFORMATION  
Datasheet  
Distinctive Characteristics  
— 56-pin TSOP/RTSOP  
— 64-ball Fortified BGA  
Architectural Advantages  
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
Software & Hardware Features  
Enhanced VersatileI/Ocontrol  
„
Software features  
— All input levels (address, control, and DQ input levels)  
and outputs are determined by voltage on VIO input.  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— Unlock Bypass Program command reduces overall  
multiple-word or byte programming time  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
V
IO range is 1.65 to VCC  
„
„
Manufactured on 110 nm MirrorBit process  
technology  
SecSi(Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
— May be programmed and locked at the factory or by  
the customer  
„
Hardware features  
— Advanced Sector Protection  
„
Flexible sector architecture  
— S29GL512N: Five hundred twelve 64 Kword (128  
Kbyte) sectors  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
— S29GL256N: Two hundred fifty-six 64 Kword (128  
Kbyte) sectors  
— S29GL128N: One hundred twenty-eight 64 Kword  
(128 Kbyte) sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
„
„
100,000 erase cycles per sector  
20-year data retention  
Performance Characteristics  
„
High performance  
— 80 ns access time (S29GL128N, S29GL256N),  
90 ns access time (S29GL512N)  
— 8-word/16-byte page read buffer  
— 16-word/32-byte write buffer  
— 25 ns page read times  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 30 mA typical interpage active read current;  
10 mA typical intrapage active read current  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
„
„
Package options  
Publication Number 27631 Revision A Amendment 1 Issue Date October 16, 2003  
This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the  
right to change or discontinue work on this proposed product without notice.  

与S29GL256N90FAI002相关器件

型号 品牌 获取价格 描述 数据表
S29GL256N90FAI003 SPANSION

获取价格

Flash, 16MX16, 90ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-64
S29GL256N90FAI010 SPANSION

获取价格

MirrorBit Flash Family
S29GL256N90FAI012 SPANSION

获取价格

3.0 Volt-only Page Mode Flash Memory featurin
S29GL256N90FAI013 SPANSION

获取价格

MirrorBit Flash Family
S29GL256N90FAI020 SPANSION

获取价格

MirrorBit Flash Family
S29GL256N90FAI022 SPANSION

获取价格

3.0 Volt-only Page Mode Flash Memory featurin
S29GL256N90FAI023 SPANSION

获取价格

MirrorBit Flash Family
S29GL256N90FAIR10 CYPRESS

获取价格

Flash, 16MX16, 90ns, PBGA64, 13 X 11 MM, FBGA-64
S29GL256N90FAIR13 CYPRESS

获取价格

Flash, 16MX16, 90ns, PBGA64, 13 X 11 MM, FBGA-64
S29GL256N90FAIV10 SPANSION

获取价格

MirrorBit Flash Family