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S29GL256N11TFI20

更新时间： 2024-11-06 07:34:59
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管
页数 文件大小 规格书
103页 2751K
描述
Flash, 16MX16, 110ns, PDSO56, LEAD FREE, MO-142EC, TSOP-56

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S29GL256N11TFI20 数据手册

 浏览型号S29GL256N11TFI20的Datasheet PDF文件第2页浏览型号S29GL256N11TFI20的Datasheet PDF文件第3页浏览型号S29GL256N11TFI20的Datasheet PDF文件第4页浏览型号S29GL256N11TFI20的Datasheet PDF文件第5页浏览型号S29GL256N11TFI20的Datasheet PDF文件第6页浏览型号S29GL256N11TFI20的Datasheet PDF文件第7页 
S29GLxxxN MirrorBitTM Flash Family  
S29GL512N, S29GL256N, S29GL128N  
512 Megabit, 256 Megabit, and 128 Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
110 nm MirrorBit process technology  
ADVANCE  
INFORMATION  
Datasheet  
Distinctive Characteristics  
Architectural Advantages  
Software & Hardware Features  
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
„
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— Unlock Bypass Program command reduces overall  
multiple-word programming time  
Enhanced VersatileI/O™ control  
— All input levels (address, control, and DQ input levels)  
and outputs are determined by voltage on V input.  
IO  
V
range is 1.65 to V  
CC  
IO  
„
„
Manufactured on 110 nm MirrorBit process  
technology  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
SecSi™ (Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
„
Hardware features  
— Advanced Sector Protection  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
— May be programmed and locked at the factory or by  
the customer  
„
Flexible sector architecture  
— S29GL512N: Five hundred twelve 64 Kword (128  
Kbyte) sectors  
— S29GL256N: Two hundred fifty-six 64 Kword (128  
Kbyte) sectors  
— S29GL128N: One hundred twenty-eight 64 Kword  
(128 Kbyte) sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
„
„
100,000 erase cycles per sector typical  
20-year data retention typical  
Performance Characteristics  
„
High performance  
— 90 ns access time (S29GL128N, S29GL256N,  
S29GL512N)  
— 8-word/16-byte page read buffer  
— 25 ns page read times  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 25 mA typical active read current;  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
„
„
Package options  
— 56-pin TSOP  
— 64-ball Fortified BGA  
Publication Number 27631 Revision A Amendment 5 Issue Date September 29, 2004  
This document contains information on a product under development at Spansion LLC. The information is intended to help you evaluate this product. Spansion LLC  
reserves the right to change or discontinue work on this proposed product without notice.  
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S29GL256N11TFIV22 SPANSION

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S29GL256N80FAF001 SPANSION

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 		Flash, 16MX16, 80ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-64
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 		Flash, 16MX16, 80ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FBGA-64

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