S29GL256M10FFIR23

更新时间： 2024-02-19 02:55:16

品牌	Logo	应用领域
飞索 - SPANSION		闪存
页数	文件大小	规格书
160页	4686K
描述
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

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S29GLxxxM MirrorBit^TMFlash Family

S29GL256M, S29GL128M, S29GL064M, S29GL032M

256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,

3.0 Volt-only Page Mode Flash Memory featuring

0.23 um MirrorBit process technology

Datasheet

PRELIMINARY

Distinctive Characteristics

— 16-word/32-byte write buffer reduces overall

programming time for multiple-word updates

Low power consumption (typical values at 3.0 V, 5

MHz)

— 18 mA typical active read current (64 Mb, 32 Mb)

— 25 mA typical active read current (256 Mb, 128 Mb)

— 50 mA typical erase/program current

— 1 µA typical standby mode current

Architectural Advantages

Single power supply operation

— 3 volt read, erase, and program operations

Manufactured on 0.23 um MirrorBit process

technology

SecSi™ (Secured Silicon) Sector region

— 128-word/256-byte sector for permanent, secure

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

Package options

— 40-pin TSOP

— 48-pin TSOP

— 56-pin TSOP

— 64-ball Fortified BGA

— 48-ball fine-pitch BGA

— 63-ball fine-pitch BGA

— May be programmed and locked at the factory or by

the customer

Flexible sector architecture

— 256Mb: 512 32 Kword (64 Kbyte) sectors

— 128Mb: 256 32 Kword (64 Kbyte) sectors

Software & Hardware Features

— 64Mb (uniform sector models): 128 32 Kword (64

Kbyte) sectors or 128 32 Kword sectors

Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)

sectors + 8 4Kword (8Kbyte) boot sectors

— 32Mb (uniform sector models): 64 32Kword (64

Kbyte) sectors of 64 32Kword sectors

— 32Mb (boot sector models): 63 32Kword (64 Kbyte)

sectors + 8 4Kword (8Kbyte) boot sectors

Compatibility with JEDEC standards

— Provides pinout and software compatibility for single-

power supply flash, and superior inadvertent write

protection

— Unlock Bypass Program command reduces overall

multiple-word programming time

Hardware features

100,000 erase cycles typical per sector

20-year data retention typical

— Sector Group Protection: hardware-level method of

preventing write operations within a sector group

— Temporary Sector Unprotect: V_ID-level method of

charging code in locked sectors

Performance Characteristics

— WP#/ACC input accelerates programming time

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

regardless of sector protection settings on uniform

sector models

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

erase cycle completion

High performance

— 90 ns access time (128Mb, 64Mb, 32Mb),

100 ns access time (256Mb)

— 4-word/8-byte page read buffer

— 25 ns page read times (128Mb, 64Mb, 32Mb)

— 30 ns page read times (256Mb)

— 16-word/32-byte write buffer

Publication Number S29GLxxxM_00 Revision A Amendment 5 Issue Date April 30, 2004

12 3 4 5 6 7...160

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与S29GL256M10FFIR23相关器件

型号	品牌	获取价格	描述	数据表
S29GL256M10TAIR1	CYPRESS	获取价格	Flash, 16MX16, 100ns, PDSO56, TSOP-56
S29GL256M10TAIR10	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR12	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR13	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR2	CYPRESS	获取价格	Flash, 16MX16, 100ns, PDSO56, TSOP-56
S29GL256M10TAIR20	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR22	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TAIR23	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR1	CYPRESS	获取价格	Flash, 16MX16, 100ns, PDSO56, TSOP-56
S29GL256M10TFIR10	SPANSION	获取价格	3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

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