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S29GL256M10TFIR23

更新时间： 2024-02-20 23:09:08
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
160页 4686K
描述
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

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中文翻译

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S29GL256M10TFIR23 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：TSSOP, TSSOP56,.8,20Reach Compliance Code：unknown
风险等级：5.82最长访问时间：100 ns
备用内存宽度：8命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PDSO-G56内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：512端子数量：56
字数：16777216 words字数代码：16000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP56,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小：4/8 words并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES部门规模：64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.06 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
类型：NOR TYPE

S29GL256M10TFIR23 数据手册

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S29GLxxxM MirrorBitTM Flash Family  
S29GL256M, S29GL128M, S29GL064M, S29GL032M  
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
0.23 um MirrorBit process technology  
Datasheet  
PRELIMINARY  
Distinctive Characteristics  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 18 mA typical active read current (64 Mb, 32 Mb)  
— 25 mA typical active read current (256 Mb, 128 Mb)  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
Architectural Advantages  
„
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
„
„
Manufactured on 0.23 um MirrorBit process  
technology  
SecSi™ (Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
Package options  
— 40-pin TSOP  
— 48-pin TSOP  
— 56-pin TSOP  
— 64-ball Fortified BGA  
— 48-ball fine-pitch BGA  
— 63-ball fine-pitch BGA  
— May be programmed and locked at the factory or by  
the customer  
„
Flexible sector architecture  
— 256Mb: 512 32 Kword (64 Kbyte) sectors  
— 128Mb: 256 32 Kword (64 Kbyte) sectors  
Software & Hardware Features  
— 64Mb (uniform sector models): 128 32 Kword (64  
Kbyte) sectors or 128 32 Kword sectors  
„
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)  
sectors + 8 4Kword (8Kbyte) boot sectors  
— 32Mb (uniform sector models): 64 32Kword (64  
Kbyte) sectors of 64 32Kword sectors  
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)  
sectors + 8 4Kword (8Kbyte) boot sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
— Unlock Bypass Program command reduces overall  
multiple-word programming time  
„
Hardware features  
„
„
100,000 erase cycles typical per sector  
20-year data retention typical  
— Sector Group Protection: hardware-level method of  
preventing write operations within a sector group  
— Temporary Sector Unprotect: VID-level method of  
charging code in locked sectors  
Performance Characteristics  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings on uniform  
sector models  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
„
High performance  
— 90 ns access time (128Mb, 64Mb, 32Mb),  
100 ns access time (256Mb)  
— 4-word/8-byte page read buffer  
— 25 ns page read times (128Mb, 64Mb, 32Mb)  
— 30 ns page read times (256Mb)  
— 16-word/32-byte write buffer  
Publication Number S29GLxxxM_00 Revision A Amendment 5 Issue Date April 30, 2004  
1234567...160

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与S29GL256M10TFIR23相关器件

型号 品牌 获取价格 描述 数据表
S29GL256M11FAIR1 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64,
S29GL256M11FAIR2 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64,
S29GL256M11FAIR23 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64, 18 X 12 MM, FORTIFIED, BGA-64
S29GL256M11FFIR2 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64,
S29GL256M11FFIR22 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64, 18 X 12 MM, LEAD FREE, FORTIFIED, BGA-64
S29GL256M11TAIR1 SPANSION

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 		Flash
S29GL256M11TAIR12 SPANSION

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 		Flash, 16MX16, 110ns, PDSO56, MO-142-EC, TSOP-56
S29GL256M11TAIR13 SPANSION

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 		Flash, 16MX16, 110ns, PDSO56, MO-142EC, TSOP-56
S29GL256M11TAIR2 SPANSION

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 		Flash
S29GL256M11TAIR22 SPANSION

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 		Flash, 16MX16, 110ns, PDSO56, MO-142-EC, TSOP-56

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