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S29GL256M10TFIR1

更新时间： 2024-01-03 08:43:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路闪存
页数 文件大小 规格书
156页 4377K
描述
Flash, 16MX16, 100ns, PDSO56, TSOP-56

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S29GL256M10TFIR1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：TSSOP, TSSOP56,.8,20Reach Compliance Code：compliant
风险等级：5.8最长访问时间：100 ns
其他特性：IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE备用内存宽度：8
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G56
JESD-609代码：e3长度：18.4 mm
内存密度：268435456 bit内存集成电路类型：FLASH
内存宽度：16湿度敏感等级：3
功能数量：1部门数/规模：512
端子数量：56字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP56,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小：4/8 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3.3 V
编程电压：3 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.06 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：14 mm
Base Number Matches：1

S29GL256M10TFIR1 数据手册

 浏览型号S29GL256M10TFIR1的Datasheet PDF文件第2页浏览型号S29GL256M10TFIR1的Datasheet PDF文件第3页浏览型号S29GL256M10TFIR1的Datasheet PDF文件第4页浏览型号S29GL256M10TFIR1的Datasheet PDF文件第5页浏览型号S29GL256M10TFIR1的Datasheet PDF文件第6页浏览型号S29GL256M10TFIR1的Datasheet PDF文件第7页 
S29GLxxxM MirrorBitTM Flash Family  
S29GL256M, S29GL128M, S29GL064M, S29GL032M  
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
0.23 um MirrorBit process technology  
Datasheet  
PRELIMINARY  
Distinctive Characteristics  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 18 mA typical active read current (64 Mb, 32 Mb)  
— 25 mA typical active read current (256 Mb, 128 Mb)  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
Architectural Advantages  
„
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
„
„
Manufactured on 0.23 um MirrorBit process  
technology  
SecSi™ (Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
Package options  
— 40-pin TSOP  
— 48-pin TSOP  
— 56-pin TSOP  
— 64-ball Fortified BGA  
— 48-ball fine-pitch BGA  
— 63-ball fine-pitch BGA  
— May be programmed and locked at the factory or by  
the customer  
„
Flexible sector architecture  
— 256Mb: 512 32 Kword (64 Kbyte) sectors  
— 128Mb: 256 32 Kword (64 Kbyte) sectors  
Software & Hardware Features  
— 64Mb (uniform sector modules): 128 32 Kword (64  
Kbyte) sectors or 128 32 Kword sectors  
„
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)  
sectors + 8 4Kword (8Kbyte) boot sectors  
— 32Mb (uniform sector models): 64 32Kword (64  
Kbyte) sectors of 64 32Kword sectors  
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)  
sectors + 8 4Kword (8Kbyte) boot sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
— Unlock Bypass Program command reduces overall  
multiple-word programming time  
„
Hardware features  
— Sector Group Protection: hardware-level method of  
preventing write operations within a sector group  
„
„
100,000 erase cycles typical per sector  
20-year data retention typical  
— Temporary Sector Unprotect: V -level method of  
ID  
charging code in locked sectors  
Performance Characteristics  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
„
High performance  
— 90 ns access time (128Mb, 64Mb, 32Mb),  
100 ns access time (256Mb)  
— 4-word/8-byte page read buffer  
— 25 ns page read times (128Mb, 64Mb, 32Mb)  
— 30 ns page read times (256Mb)  
— 16-word/32-byte write buffer  
Publication Number S29GLxxxM_00 Revision A Amendment 3 Issue Date February 26, 2004  
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与S29GL256M10TFIR1相关器件

型号 品牌 获取价格 描述 数据表
S29GL256M10TFIR10 SPANSION

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 		3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR12 SPANSION

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 		3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR13 SPANSION

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 		3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR2 SPANSION

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 		Flash, 16MX16, 100ns, PDSO56,
S29GL256M10TFIR20 SPANSION

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 		3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR22 SPANSION

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 		3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR23 SPANSION

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 		3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M11FAIR1 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64,
S29GL256M11FAIR2 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64,
S29GL256M11FAIR23 SPANSION

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 		Flash, 16MX16, 110ns, PBGA64, 18 X 12 MM, FORTIFIED, BGA-64

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