是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | BGA, BGA64,8X8,40 | Reach Compliance Code: | unknown |
风险等级: | 5.78 | 最长访问时间: | 100 ns |
备用内存宽度: | 8 | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | S-PBGA-B64 | 内存密度: | 268435456 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
部门数/规模: | 512 | 端子数量: | 64 |
字数: | 16777216 words | 字数代码: | 16000000 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA64,8X8,40 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY |
页面大小: | 4/8 words | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 部门规模: | 64K |
最大待机电流: | 0.000005 A | 子类别: | Flash Memories |
最大压摆率: | 0.06 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 切换位: | YES |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S29GL256M10FFIR13 | SPANSION |
获取价格 |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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S29GL256M10FFIR2 | SPANSION |
获取价格 |
Flash |
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S29GL256M10FFIR20 | SPANSION |
获取价格 |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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S29GL256M10FFIR22 | SPANSION |
获取价格 |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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S29GL256M10FFIR23 | SPANSION |
获取价格 |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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S29GL256M10TAIR1 | CYPRESS |
获取价格 |
Flash, 16MX16, 100ns, PDSO56, TSOP-56 |
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S29GL256M10TAIR10 | SPANSION |
获取价格 |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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S29GL256M10TAIR12 | SPANSION |
获取价格 |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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S29GL256M10TAIR13 | SPANSION |
获取价格 |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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S29GL256M10TAIR2 | CYPRESS |
获取价格 |
Flash, 16MX16, 100ns, PDSO56, TSOP-56 |
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