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S29GL128P90TAIR10 PDF预览

S29GL128P90TAIR10

更新时间: 2024-02-01 11:28:57
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路闪存
页数 文件大小 规格书
82页 901K
描述
Flash, 128MX1, 90ns, PDSO56, TSOP-56

S29GL128P90TAIR10 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:TSOP1
包装说明:20 X 14 MM, MO-142EC, TSOP-56针数:56
Reach Compliance Code:not_compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.37
最长访问时间:90 ns备用内存宽度:8
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G56
JESD-609代码:e0长度:18.4 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:1湿度敏感等级:3
功能数量:1部门数/规模:128
端子数量:56字数:134217728 words
字数代码:128000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128MX1封装主体材料:PLASTIC/EPOXY
封装代码:HTSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH
页面大小:8/16 words并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:128K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.11 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

S29GL128P90TAIR10 数据手册

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