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S29GL128P90TFIR10 PDF预览

S29GL128P90TFIR10

更新时间： 2024-01-07 15:37:58
品牌 Logo 应用领域
赛普拉斯 - CYPRESS PC光电二极管内存集成电路闪存
页数 文件大小 规格书
82页 901K
描述
Flash, 128MX1, 90ns, PDSO56, TSOP-56

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S29GL128P90TFIR10 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TSOP1
包装说明：HTSSOP, TSSOP56,.8,20针数：56
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：3.93
Is Samacsys：N最长访问时间：90 ns
备用内存宽度：8命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PDSO-G56JESD-609代码：e3
长度：18.4 mm内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：1
湿度敏感等级：3功能数量：1
部门数/规模：128端子数量：56
字数：134217728 words字数代码：128000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128MX1
封装主体材料：PLASTIC/EPOXY封装代码：HTSSOP
封装等效代码：TSSOP56,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH页面大小：8/16 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：128K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.11 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
切换位：YES类型：NOR TYPE
宽度：14 mmBase Number Matches：1

S29GL128P90TFIR10 数据手册

 浏览型号S29GL128P90TFIR10的Datasheet PDF文件第2页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第3页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第4页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第5页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第6页浏览型号S29GL128P90TFIR10的Datasheet PDF文件第7页 
S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash  
with 90 nm MirrorBit Process Technology  
General Description  
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices  
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that  
allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than  
standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density,  
better performance and lower power consumption.  
Distinctive Characteristics  
Single 3V read/program/erase (2.7-3.6 V)  
20-year data retention typical  
Offered Packages  
– 56-pin TSOP  
Enhanced VersatileI/O™ control  
– All input levels (address, control, and DQ input levels) and  
outputs are determined by voltage on VIO input. VIO range is 1.65  
to VCC  
– 64-ball Fortified BGA  
Suspend and Resume commands for Program and Erase  
90 nm MirrorBit process technology  
8-word/16-byte page read buffer  
operations  
Write operation status bits indicate program and erase operation  
completion  
32-word/64-byte write buffer reduces overall programming time for  
multiple-word updates  
Unlock Bypass Program command to reduce programming time  
Support for CFI (Common Flash Interface)  
Secured Silicon Sector region  
– 128-word/256-byte sector for permanent, secure identification  
through an 8-word/16-byte random Electronic Serial Number  
– Can be programmed and locked at the factory or by the  
customer  
Persistent and Password methods of Advanced Sector Protection  
WP#/ACC input  
– Accelerates programming time (when VHH is applied) for greater  
throughput during system production  
– Protects first or last sector regardless of sector protection  
settings  
Uniform 64 Kword/128 Kbyte Sector Architecture  
– S29GL01GP: One thousand twenty-four sectors  
– S29GL512P: Five hundred twelve sectors  
– S29GL256P: Two hundred fifty-six sectors  
– S29GL128P: One hundred twenty-eight sectors  
100,000 erase cycles per sector typical  
Hardware reset input (RESET#) resets device  
Ready/Busy# output (RY/BY#) detects program or erase cycle  
completion  
Performance Characteristics  
Maximum Read Access Times (ns)  
Random Access Page Access Time  
CE# Access Time OE#Access Time  
Density  
Voltage Range (1)  
Time (tACC  
)
(tPACC  
)
(tCE  
)
(tOE)  
Regulated VCC  
Full VCC  
90  
90  
128 & 256 Mb  
100/110  
110  
25  
100/110  
110  
25  
VersatileIO VIO  
Regulated VCC  
Full VCC  
100  
100  
512 Mb  
110  
25  
25  
110  
25  
25  
VersatileIO VIO  
Regulated VCC  
Full VCC  
120  
120  
110  
110  
1 Gb  
120  
120  
VersatileIO VIO  
130  
130  
Notes  
1. Access times are dependent on VCC and VIO operating ranges.  
See Ordering Information page for further details.  
Regulated VCC: VCC = 3.0–3.6 V.  
Full VCC: VCC = VIO = 2.7–3.6 V.  
VersatileIO VIO: VIO = 1.65–VCC, VCC = 2.7–3.6 V.  
2. Contact a sales representative for availability.  
Cypress Semiconductor Corporation  
Document Number: 002-00886 Rev. *B  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 22, 2017  
 
 
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