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Datasheet > S29CD032J0JFFI100
S29CD032J0JFFI100 PDF预览

S29CD032J0JFFI100

更新时间： 2024-02-18 10:00:15
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
76页 1861K
描述
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O

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S29CD032J0JFFI100 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：BGA
包装说明：LBGA,针数：80
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.03
最长访问时间：54 ns其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
启动块：TOPJESD-30 代码：R-PBGA-B80
JESD-609代码：e1长度：13 mm
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：32湿度敏感等级：3
功能数量：1端子数量：80
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX32
封装主体材料：PLASTIC/EPOXY封装代码：LBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：1.4 mm最大供电电压 (Vsup)：2.75 V
最小供电电压 (Vsup)：2.5 V标称供电电压 (Vsup)：2.6 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：11 mm
Base Number Matches：1

S29CD032J0JFFI100 数据手册

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S29CD-J & S29CL-J Flash Family  
S29CD032J, S29CD016J, S29CL032J, S29CL016J  
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only  
Simultaneous Read/Write, Dual Boot, Burst Mode  
Flash Memory with VersatileI/O™  
Data Sheet (Preliminary)  
General Description  
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process  
technology. These burst-mode Flash devices are capable of performing simultaneous read and write  
operations with zero latency on two separate banks, using separate data and address pins. These products  
can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or  
3.0 V to 3.6 V (S29CL-J) that make them ideal for today’s demanding automotive applications.  
Distinctive Characteristics  
„ Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/  
„ Supports Common Flash Interface (CFI)  
„ Extended Temperature range  
erase  
„ 110 nm Floating Gate Technology  
„ Simultaneous Read/Write operation with zero latency  
„ x32 Data Bus  
„ Persistent and Password methods of Advanced Sector  
Protection  
„ Unlock Bypass program command to reduce programming  
time  
„ Dual Boot Sector Configuration (top and bottom)  
„ Flexible Sector Architecture  
„ ACC input pin to reduce factory programming time  
„ Data Polling bits indicate program and erase operation  
– CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double  
word, and Eight 2K Double Word sectors  
completion  
– CD032J & CL032J: Eight 2K Double word, Sixty-two 16K Double  
Word, and Eight 2K Double Word sectors  
„ Hardware (WP#) protection of two outermost sectors in the  
large bank  
„ VersatileI/O™ control (1.65 V to 3.6 V)  
„ Ready/Busy (RY/BY#) output indicates data available to  
„ Programmable Burst Interface  
system  
– Linear for 2, 4, and 8 double word burst with or without wrap around  
„ Suspend and Resume commands for Program and Erase  
Operation  
„ Secured Silicon Sector that can be either factory or customer  
locked  
„ Offered Packages  
– 80-pin PQFP  
„ 20 year data retention (typical)  
– 80-ball Fortified BGA  
– Pb-free package option available  
– Known Good Die  
„ Cycling Endurance: 1 million write cycles per sector (typical)  
„ Command set compatible with JEDEC (JC42.4) standard  
Performance Characteristics  
Read Access Times  
Current Consumption (Max values)  
75  
Continuous Burst Read @ 75 MHz  
90 mA  
50 mA  
50 mA  
60 µA  
Speed Option (MHz)  
66  
56  
40  
(32 Mb only)  
Program  
Max Asynch. Access Time, ns (t  
)
48  
54  
8
54  
8
54  
8
ACC  
Erase  
Max Synch. Burst Access, ns (t  
)
7.5 (FBGA)  
BACC  
Standby Mode  
Min Initial Clock Delay (clock cycles)  
Max CE# Access Time, ns (t  
5
4
4
3
)
52  
20  
54  
20  
54  
20  
54  
20  
CE  
Typical Program and Erase Times  
Max OE# Access time, ns (t  
)
OE  
Double Word Programming  
Sector Erase  
18 µs  
1.0 s  
Publication Number S29CD-J_CL-J_00  
Revision B  
Amendment 1  
Issue Date September 27, 2006  
This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-  
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document  
may be revised by subsequent versions or modifications due to changes in technical specifications.  
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与S29CD032J0JFFI100相关器件

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S29CD032J0JFFI102 SPANSION

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 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
S29CD032J0JFFI103 SPANSION

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 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
S29CD032J0JFFI110 SPANSION

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 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
S29CD032J0JFFI112 SPANSION

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 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
S29CD032J0JFFI113 SPANSION

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 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
S29CD032J0JFFI120 SPANSION

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 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
S29CD032J0JFFI122 SPANSION

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 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
S29CD032J0JFFI123 SPANSION

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 		Flash, 1MX32, 54ns, PBGA80, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
S29CD032J0JFFI133 SPANSION

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 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod
S29CD032J0JFFM000 SPANSION

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 		32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mod

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