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S25FL032P0XMFI013 PDF预览

S25FL032P0XMFI013

更新时间: 2024-09-17 20:48:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管
页数 文件大小 规格书
60页 1910K
描述
Flash, 4KX16, PDSO8, SOP-8

S25FL032P0XMFI013 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SON, SOP8,.3Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.7Is Samacsys:N
Base Number Matches:1

S25FL032P0XMFI013 数据手册

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S25FL032P  
32-Mbit 3.0 V Flash Memory  
This product family has been retired and is not recommended for designs. For new and current designs, S25FL064L supersede  
S25FL032P. These are the factory-recommended migration paths. Refer to the S25FL-L Family datasheets for specifications and  
ordering information.  
Distinctive Characteristics  
Common Flash Interface (CFI) compliant: allows host system  
Architectural Advantages  
Single power supply operation  
to identify and accommodate multiple flash devices  
Process technology  
– Full voltage range: 2.7 V to 3.6 V read and write operations  
– Manufactured on 0.09 m MirrorBit® process technology  
Package option  
Memory architecture  
– Uniform 64-KB sectors  
– Industry Standard Pinouts  
– 8-pin SO package (208 mils)  
– 16-pin SO package (300 mils)  
Top or bottom parameter block (two 64-KB sectors (top  
or bottom) broken down into 16 4-KB sub-sectors each)  
– 256-byte page size  
– 8-contact USpackage (5 6 mm)  
– 8-contact WSON package (6 8 mm)  
– 24-ball BGA 6 8 mm package, 5 5 pin configuration  
– 24-ball BGA 6 8 mm package, 6 4 pin configuration  
– Backward compatible with the S25FL032A device  
Program  
– Page Program (up to 256 bytes) in 1.5 ms (typical)  
– Program operations are on a page by page basis  
– Accelerated programming mode via 9-V W#/ACC pin  
– Quad Page Programming  
Performance Characteristics  
Speed  
Erase  
– Normal READ (Serial): 40-MHz clock rate  
– FAST_READ (Serial): 104-MHz clock rate (maximum)  
– DUAL I/O FAST_READ: 80-MHz clock rate or  
20 MB/s effective data rate  
– QUAD I/O FAST_READ: 80 MHz clock rate or  
40 MB/s effective data rate  
– Bulk erase function  
– Sector erase (SE) command (D8h) for 64-KB sectors  
– Sub-sector erase (P4E) command (20h) for 4-KB sectors  
– Sub-sector erase (P8E) command (40h) for 8-KB sectors  
Cycling endurance  
– 100,000 cycles per sector typical  
Data retention  
Power saving standby mode  
– Standby Mode 80 A (typical)  
– Deep Power-Down Mode 3 A (typical)  
– 20 years typical  
Device ID  
– JEDEC standard two-byte electronic signature  
– RES command one-byte electroic signature for backward  
compatibility  
Memory Protection Features  
Memory protection  
– W#/ACC pin works in conjunction with Status Register Bits  
to protect specified memory areas  
– Status Register Block Protection bits (BP2, BP1, BP0) in  
status register configure parts of memory as read-only  
One time programmable (OTP) area for permanent, secure  
identification; can be programmed and locked at the factory  
or by the customer  
Cypress Semiconductor Corporation  
Document Number: 002-00650 Rev. *L  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 19, 2017  

S25FL032P0XMFI013 替代型号

型号 品牌 替代类型 描述 数据表
S25FL032P0XMFI011 CYPRESS

完全替代

Flash, 4KX16, PDSO8, SOP-8
S25FL032P0XMFI010 CYPRESS

完全替代

4K X 16 FLASH 3V PROM, PDSO8, SOP-8
S25FL032P0XMFI011 SPANSION

完全替代

32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/

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S25FL032P0XMFV010 SPANSION

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S25FL032P0XMFV010 CYPRESS

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4K X 16 FLASH 3V PROM, PDSO8, SOP-8
S25FL032P0XMFV011 SPANSION

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32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/