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S25FL004D0LNAI013 PDF预览

S25FL004D0LNAI013

更新时间: 2024-09-16 21:54:19
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
36页 792K
描述
4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface

S25FL004D0LNAI013 数据手册

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S25FL Family (Serial Peripheral Interface)  
S25FL004D  
4 Megabit CMOS 3.0 Volt Flash Memory  
with 50 Mhz SPI Bus Interface  
ADVANCE  
INFORMATION  
Distinctive Characteristics  
ARCHITECTURAL ADVANTAGES  
PERFORMANCE CHARACTERISTICS  
„
Single power supply operation  
„
Speed  
— 50 MHz clock rate (maximum)  
Power Saving Standby Mode  
— Standby Mode 1 µA (typical)  
— Full voltage range: 2.7 to 3.6 V read and program  
operations  
Memory Architecture  
„
„
„
— Eight sectors with 512 Kb each  
Program  
— Page Program (up to 256 bytes) in 1.5 ms (typical)  
— Program cycles are on a page by page basis  
Erase  
Memory Protection Features  
„
Memory Protection  
— W# pin works in conjunction with Status Register Bits  
to protect specified memory areas  
„
— Status Register Block Protection bits (BP1, BP0) in  
status register configure parts of memory as read-  
only  
— 0.5 s typical sector erase time  
— 4 s typical bulk erase time  
Endurance  
— 100,000 cycles per sector typical  
Data Retention  
„
„
SOFTWARE FEATURES  
„
SPI Bus Compatible Serial Interface  
— 20 years typical  
„
„
„
Device ID  
— Electronic signature  
Process Technology  
— Manufactured on 0.25 µm process technology  
Package Option  
— Industry Standard Pinouts  
— 8-pin SO (208mil) package  
— 8-contact WSON leadless package (6x5mm)  
Publication Number S25FL004D_00 Revision A Amendment 0 Issue Date June 28, 2004  

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