5秒后页面跳转
S1NB80 PDF预览

S1NB80

更新时间: 2024-11-16 03:34:43
品牌 Logo 应用领域
DEC 二极管光电二极管IOT
页数 文件大小 规格书
2页 342K
描述
1 AMP MINIATURE BRIDGE RECTIFIERS

S1NB80 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDIP-T4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.47
Is Samacsys:N其他特性:HIGH RELIABILITY
最小击穿电压:800 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:R-PDIP-T4
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUALBase Number Matches:1

S1NB80 数据手册

 浏览型号S1NB80的Datasheet PDF文件第2页 
DIOTEC ELECTRONICS CORP.  
18020 Hobart Blvd., Unit B  
Data Sheet No. BRDI-101-1C  
Gardena, CA 90248 U.S.A  
Tel.: (310) 767-1052 Fax: (310) 767-7958  
1 AMP MINIATURE BRIDGE RECTIFIERS  
MECHANICAL SPECIFICATION  
FEATURES  
SERIES S1NB05 - S1NB100  
ACTUAL SIZE OF  
MDI PACKAGE  
Glass Passivated for high reliability/temperature performance  
PRV Ratings from 50 to 1000 Volts  
Surge overload rating to 30 Amps peak  
Reliable low cost molded plastic construction  
Ideal for printed circuit board applications  
-
+
RoHS COMPLIANT  
S1NB  
60 46  
MECHANICAL DATA  
Case: Molded Epoxy (UL Flammability Rating 94V-0)  
_
E
C
+
Terminals: Rectangular pins  
A
Soldering: Per MIL-STD 202 Method 208 guaranteed  
D
D1  
Polarity: Marked on case  
D2  
B
B1  
Mounting Position: Any  
B2  
M
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS  
PARAMETER (TEST CONDITIONS)  
RATINGS  
SYMBOL  
UNITS  
S1NB S1NB S1NB S1NB S1NB S1NB S1NB  
Series Number  
05  
10  
20  
40  
60  
80  
100  
1000  
700 VOLTS  
1000  
Maximum DC Blocking Voltage  
V
V
V
I
50  
100  
200  
400  
600  
800  
Maximum RMS Voltage  
35  
70  
140  
280  
400  
1
420  
560  
Maximum Peak Recurrent Reverse Voltage  
Average Forward Rectified Current @ T = 40 C  
50  
100  
200  
600  
800  
AMPS  
Peak Forward Surge Current. Single 60Hz Half-Sine Wave  
Superimposed on Rated Load (JEDEC Method).  
I
50  
Maximum Forward Voltage (Per Diode) at 1 Amp DC  
V
1.05  
VOLTS  
Maximum Average DC Reverse Current  
At Rated DC Blocking Voltage  
5.0  
mA  
@ T = 25 C  
I
0.5  
mA  
@ T = 125 C  
Junction to Ambient (Note 1)  
R
40  
Typical Thermal Resistance  
°C/W  
VOLTS  
°C  
R
15  
Junction to Lead (Note 1)  
Minimum Insulation Breakdown Voltage (Circuit to Case)  
V
2400  
T
T
-55 to +150  
Operating and Storage Temperature Range  
E3  

与S1NB80相关器件

型号 品牌 获取价格 描述 数据表
S1NK60Z STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Pro
S-1P1-G SAMTEC

获取价格

PCB Terminal
S-1P1-T SAMTEC

获取价格

PCB Terminal
S1P2655A01 SAMSUNG

获取价格

LINEAR INTEGRATED CIRCUIT
S1P2655A01-D0B0 SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16
S1P2655A02 SAMSUNG

获取价格

LINEAR INTEGRATED CIRCUIT
S1P2655A03 SAMSUNG

获取价格

LINEAR INTEGRATED CIRCUIT
S1P2655A03-S0B0 SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, SOP-16
S1P2655A04 SAMSUNG

获取价格

LINEAR INTEGRATED CIRCUIT
S1P2655A04-D0B0 SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16