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S1P2655A01-D0B0

更新时间： 2024-11-16 15:50:15
品牌 Logo 应用领域
三星 - SAMSUNG 开关光电二极管晶体管
页数 文件大小 规格书
6页 82K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16

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S1P2655A01-D0B0 技术参数

生命周期：Obsolete零件包装代码：DIP
包装说明：DIP-16针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.84
Is Samacsys：N最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：50 V配置：COMPLEX
最小直流电流增益 (hFE)：1000JESD-30 代码：R-PDIP-T16
元件数量：7端子数量：16
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：250 ns最大开启时间（吨）：250 ns
Base Number Matches：1

S1P2655A01-D0B0 数据手册

 浏览型号S1P2655A01-D0B0的Datasheet PDF文件第2页浏览型号S1P2655A01-D0B0的Datasheet PDF文件第3页浏览型号S1P2655A01-D0B0的Datasheet PDF文件第4页浏览型号S1P2655A01-D0B0的Datasheet PDF文件第5页浏览型号S1P2655A01-D0B0的Datasheet PDF文件第6页 
LINEAR INTEGRATED CIRCUIT  
S1P2655A01/02/03/04/05  
INTRODUCTION  
16- DIP  
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS  
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04  
and S1P2655A05 are comprised of saven high voltage, high  
current NPN darlington transistors arrays with common emitter,  
open collector outputs. Suppression diodes are included for  
inductive load driving and the inputs are pinned opposite the  
outputs to simplify board layout. Peak inrush currents to 600mA  
permit them to drive incandescent lamps.  
The S1P2655A01 is a general purpose array for use with DTL,  
TTL, PMOS or CMOS logic directly.  
16- SOP  
The S1P2655A02 version does away with the need for any  
external discrete resistors, since each usit has a resistor and a  
zener diode in series with the input. The S1P2655A02 is  
designed for use with 14 to 25V PMOS devices. The zener  
diode also gives these devices excellent noise immunity.  
The S1P2655A03 has a series base resistor to each darlington  
pair, and thus allows operation directly with TTL or CMOS oper-  
ating at supply voltages of 5V. The S1P2655A03 will handle  
numberous interfaces needs-particularly those beyond the  
capailities of standard logic buffers.  
The S1P2655A04 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operat-  
ing supply voltage of 6V to 15V.  
The S1P2655A05 is designed for use with standard TTL and Schottky TTL, with which hinger output currents are  
required and loading of the logic output is not a concern.  
These devices will sink a minimum of 350mA when driven from a “totempole” logic output.  
These versatile devices are useful for driving a wide range of loads including Solenoids, Relays, DC motors, LED  
displays, Filament lamps, thermal printheads and high power buffer. Applications requiriing sink currents beyonds  
the capability of a single output may be accomodated by paralleling the outputs.  
APPLICATIONS  
•
•
•
•
•
•
•
Relay driver  
DC motor driver  
Solenoids driver  
LED display driver  
Filament lamp driver  
High power buffer  
Thermal print head driver  
1
123456

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S1P2655A03 SAMSUNG

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S1P2655A03-S0B0 SAMSUNG

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 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, SOP-16
S1P2655A04 SAMSUNG

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 		LINEAR INTEGRATED CIRCUIT
S1P2655A04-D0B0 SAMSUNG

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 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16
S1P2655A04-S0B0 SAMSUNG

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 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, SOP-16
S1P2655A05 SAMSUNG

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 		LINEAR INTEGRATED CIRCUIT
S1P2655A05-D0B0 SAMSUNG

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 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16
S1PA VISHAY

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S1PA-E3 VISHAY

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 		Rectifier Diode, 1 Element, 1A, Silicon, PLASTIC, CASE SMP, 2 PIN

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