S1PB

更新时间： 2024-11-15 22:22:59

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
2页	155K
描述
High Current Density Surface Mount Glass-Passivated Rectifiers

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中文翻译

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技术参数
数据手册

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S1PB 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.74	Is Samacsys：	N
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.95 V	最大非重复峰值正向电流：	30 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	1 A	最大重复峰值反向电压：	100 V
子类别：	Rectifier Diodes	表面贴装：	YES
Base Number Matches：	1

S1PB 数据手册

S1PA thru S1PJ

Vishay Semiconductors

New Product

formerly General Semiconductor

High Current Density Surface Mount

Glass-Passivated Rectifiers

Reverse Voltage 50 to 600 V

Forward Current 1.0 A

Case Style SMP

Cathode band

Features

• Very low profile - typical height of 1.0mm

• Ideal for automated placement

• Glass passivated chip junction

0.086 (2.18)

0.074 (1.88)

• For use in rectification, power supply, home appliances

and telecommunication

• High temperature soldering:

260°C maximum/10 seconds at terminals

• Meets MSL level 1 per J-STD-020C

0.142 (3.61)

0.126 (3.19)

0.158 (4.00)

0.146 (3.70)

Mechanical Data

Case: SMP

Terminals: Matte Tin plated (E3 Suffix) leads, solderable

per J-STD-002B and MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Weight: 0.0009 oz., 0.024 g

0.013 (0.35)

0.004 (0.10)

0.045 (1.15)

0.033 (0.85)

0.012 (0.30)

0.000 (0.00)

Epoxy meets UL 94V-0 flammability rating

0.018 (0.45)

0.006 (0.15)

Mounting Pad Layout

Dimensions in inches

and (millimeters)

0.030

(0.762)

0.012 (0.30) REF

0.105

(2.67)

0.025

(0.635)

0.053 (1.35)

0.041 (1.05)

0.036 (0.91)

0.024 (0.61)

0.050

(1.27)

0.100

(2.54)

0.032 (0.80)

0.016 (0.40)

0.103 (2.60)

0.087 (2.20)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

S1PA S1PB S1PD S1PG

S1PJ

Unit

Device marking code

200

Maximum reverse voltage

Maximum average forward rectified current Fig.1

V_RM

100

400

600

I_F(AV)

Peak forward surge current 10ms single half sine-wave

superimposed on rated load

I_FSM

R_θJA

R_θJL

R_θJC

105

Typical thermal resistance ⁽¹⁾

°C/W

Operating junction temperature

Storage temperature

T_J,

150

°C

T_STG

–55 to +150

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Maximum instantaneous forward voltage⁽²⁾at I_F=1A, T_J=25°C

1.1

0.95

V_F

at I_F=1A, T_J=125°C

Maximum reverse current

at rated VR⁽²⁾

Typical reverse recovery time at

at I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A

T_J= 25°C

T_J=125°C

1.0

I_R

µA

µs

trr

1.8

Typical junction capacitance at 4.0V, 1MHz

C_J

6.0

Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. R_θJLis measured at the ter-

minal of cathode band. R_θJCis measured at the top centre of the body

(2) Pulse test: 300µs pulse width, 1% duty cycle

Document Number 88917

23-Sep-04

www.vishay.com

中文翻译

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与S1PB相关器件

型号	品牌	获取价格	描述	数据表
S1PB-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
S1PB-E3/84A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S
S1PB-E3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
S1PB-HE3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
S1PBHE3/84A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
S1PB-HE3/84A	VISHAY	获取价格	1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
S1PBHE3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
S1PB-HE3/85A	VISHAY	获取价格	1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
S1PBHM3/84A	VISHAY	获取价格	1A,100V,GPP,STD,SM RECT
S1PBHM3/85A	VISHAY	获取价格	1A,100V,GPP,STD,SM RECT

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