Datasheet > S1NB05-S1NB100

S1NB05-S1NB100

更新时间： 2024-09-28 12:33:31

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	430K
描述
Glass passivated chip junctions

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中文翻译

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数据手册

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S1NB05-S1NB100 数据手册

Product specification

S1NB05 - S1NB100

Unit: mm

■ Features

● Glass passivated chip junctions

● Surge overload rating to 30 Amps peak

● Reliable low cost molded plastic construction

● Ideal for printed circuit board applications

1. +

2. AC in

3. AC in

4. -

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol S1NB05 S1NB10 S1NB20 S1NB40 S1NB60 S1NB80 S1NB100 Unit

VRMM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRWM

VDC

100

200

400

600

800

1000

RMS Reverse Voltage

VRMS

140

280

1.0

420

560

700

Average Forward Rectified Current TA=@ 40℃

Non-Repetitive Peak Forward Surge Current, 8.3 ms

Single half-sine-wave Superimposed on Rated Load

(JEDECmethod)

IFSM

1.05

Forward Voltage (per element) @ IF = 1.0A

500

Reverse Current(per element) @ Rated VR ,

TA = 25℃

TA = 125℃

μA

2400

Minimum Insulation Breakdown Voltage (Circuit to Case)

Typical Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

VISO

RθJA

℃/W

℃

-55 to +150

Tj, Tstg

Notes: 1. Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).

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http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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