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S1M-HE3 PDF预览

S1M-HE3

更新时间: 2024-11-29 20:03:59
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 344K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

S1M-HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:1.8 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

S1M-HE3 数据手册

 浏览型号S1M-HE3的Datasheet PDF文件第2页浏览型号S1M-HE3的Datasheet PDF文件第3页浏览型号S1M-HE3的Datasheet PDF文件第4页 
S1A thru S1M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
50 V to 1000 V  
40 A, 30 A  
1.0 µA, 5.0 µA  
1.1 V  
VF  
Tj max.  
150 °C  
DO-214AC (SMA)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AC (SMA)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
S1A  
SA  
50  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M  
SM  
Unit  
Device marking code  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
200  
400  
600  
800  
1000  
V
V
V
A
A
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current (see fig.1)  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
40  
30  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88711  
06-Sep-05  
www.vishay.com  
1

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