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S175-50 PDF预览

S175-50

更新时间: 2024-10-27 22:22:59
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
3页 400K
描述
175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz

S175-50 数据手册

 浏览型号S175-50的Datasheet PDF文件第2页浏览型号S175-50的Datasheet PDF文件第3页 
S175 - 50  
175 Watts, 50 Volts, Class AB  
Milcom 1.5 - 30 MHz  
CASE OUTLINE  
55HX, Style 2  
GENERAL DESCRIPTION  
The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A,  
AB or C operation in the HF/VHF frequency bands. Its high collector voltage  
simplifies the design of wideband, SSB linear amplifiers. The transistor chip is  
built using Gold Topside Metal, diffused emitter ballast resistors and silicon  
nitride passivation, providing the user with the Highest MTTF available.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
270 Watts  
Maximum Voltage and Current  
BVces Collector to Emiter Voltage  
BVebo Emitter to Base Voltage  
110 Volts  
4.0 Volts  
20 A  
Ic  
Collector Current  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to +150oC  
+200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
Pout  
Pin  
Pg  
Power Output  
Power Input  
Power Gain  
Efficiency  
Load Mismatch Tolerance  
F = 30 MHz  
Vcc = 50 Volts  
At Rated Power Out  
175  
Watts  
Watts  
dB  
3.5  
17  
17.5  
65  
%
ηc  
VSWR  
30:1  
BVebo  
BVces  
BVceo  
Zin  
ZI  
Cob  
Emitter to Base Breakdown  
Collector to Emitter  
Breakdown  
Collector to Emitter  
Breakdown  
Series Input Impedance  
Series Load Impedance  
Output Capacitance  
DC - Current Gain  
Ie = 10 mA  
Ic = 100 mA  
Ie = 100 mA  
At Rated Pout & Freq.  
At Rated Pout & Freq.  
Vcb = 50 V, Ie = 0  
Vce = 5 V, Ic = 2 A  
At Rated Pout  
4
110  
53  
Volts  
Volts  
Volts  
OHMS  
OHMS  
0.6-j0.4  
4.6+2.1  
180  
hFE  
IMD  
10  
-35  
dBc  
Intermodulation Distortion Lev.  
Initial Issue June, 1994  
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT  
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,  
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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