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S150KR PDF预览

S150KR

更新时间: 2024-10-28 01:11:07
品牌 Logo 应用领域
GENESIC 二极管
页数 文件大小 规格书
3页 751K
描述
Silicon Standard Recovery Diode

S150KR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:O-MUPM-H1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
应用:GENERAL PURPOSE外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JEDEC-95代码:DO-205AAJESD-30 代码:O-MUPM-H1
最大非重复峰值正向电流:3140 A元件数量:1
相数:1端子数量:1
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:150 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:800 V
最大反向电流:10 µA表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

S150KR 数据手册

 浏览型号S150KR的Datasheet PDF文件第2页浏览型号S150KR的Datasheet PDF文件第3页 
S150J thru S150QR  
VRRM = 600 V - 1200 V  
IF =150 A  
Silicon Standard  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 600 V to 1200 V VRRM  
DO-8 Package  
• Not ESD Sensitive  
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
S150M (R) S150Q (R)  
Parameter  
Symbol  
S150J (R)  
S150K (R)  
Unit  
VRRM  
VRMS  
VDC  
IF  
1000  
700  
1200  
840  
Repetitive peak reverse voltage  
RMS reverse voltage  
600  
420  
600  
150  
800  
560  
800  
150  
V
V
V
A
1000  
150  
1200  
150  
DC blocking voltage  
TC 180 °C  
Continuous forward current  
Surge non-repetitive forward  
current, Half Sine Wave  
IF,SM  
TC = 25 °C, tp = 8.3 ms  
3140  
3140  
3140  
3140  
A
Tj  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
S150M (R) S150Q (R)  
Parameter  
Symbol  
S150J (R)  
S150K (R)  
Unit  
VF  
IR  
IF = 150 A, Tj = 25 °C  
VR = 600 V, Tj = 25 °C  
VR = 600 V, Tj = 150 °C  
1.2  
10  
15  
1.2  
10  
9
V
Diode forward voltage  
Reverse current  
1.2  
10  
15  
1.2  
10  
15  
μA  
mA  
Thermal characteristics  
Thermal resistance, junction -  
case  
RthJC  
0.35  
0.35  
0.35  
0.35  
°C/W  
1
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/  

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