Datasheet > S150QR

S150QR

更新时间： 2024-10-28 01:11:07

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	751K
描述
Silicon Standard Recovery Diode

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中文翻译

获取价格

数据手册

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S150QR 数据手册

S150J thru S150QR

V_RRM= 600 V - 1200 V

I_F=150 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 600 V to 1200 V V_RRM

DO-8 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

S150M (R) S150Q (R)

Parameter

Symbol

S150J (R)

S150K (R)

Unit

V_RRM

V_RMS

V_DC

I_F

1000

700

1200

840

Repetitive peak reverse voltage

RMS reverse voltage

600

420

600

150

800

560

800

150

1000

150

1200

150

DC blocking voltage

T_C≤ 180 °C

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

I_F,SM

T_C= 25 °C, t_p= 8.3 ms

3140

T_j

-55 to 150

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

S150M (R) S150Q (R)

Parameter

Symbol

S150J (R)

S150K (R)

Unit

V_F

I_R

I_F= 150 A, T_j= 25 °C

V_R= 600 V, T_j= 25 °C

V_R= 600 V, T_j= 150 °C

1.2

Diode forward voltage

Reverse current

1.2

μA

Thermal characteristics

Thermal resistance, junction -

case

R_thJC

0.35

°C/W

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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中文翻译

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