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S106M1 PDF预览

S106M1

更新时间: 2024-11-12 10:56:07
品牌 Logo 应用领域
HUTSON /
页数 文件大小 规格书
2页 130K
描述
Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-202

S106M1 数据手册

 浏览型号S106M1的Datasheet PDF文件第2页 
MAXIMUM RATINGS  
SYMBOL VDRM  
DEVICE NUMBERS  
200µA Gate  
UNITS  
50  
S106F*  
S206F*  
S206A*  
S206B*  
S206D*  
S206M*  
S306F*  
100  
200  
400  
S106A*  
S106B*  
S106D*  
S106M*  
S306A*  
S306B*  
S306D*  
S306M*  
600  
REPETITIVE PEAK OFF-STATE VOLTAGE (1)  
GATE OPEN, AND TJ = 110° C  
VDRM &  
VRRM  
VOLT  
500µA Gate  
50  
S107F*  
S107A*  
S107B*  
S107D*  
S107M*  
S207F*  
S207A*  
S207B*  
S207D*  
S207M*  
S307F*  
S307A*  
S307B*  
S307D*  
S307M*  
100  
200  
400  
600  
RMS ON-STATE CURRENT AT TC = 80º C AND  
CONDUCTION, ANGLE OF 360º  
IT(RMS)  
ITSM  
4.0  
40  
6.0  
60  
8.0  
80  
AMP  
AMP  
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,  
ONE-CYCLE, AT 50HZ OR 60HZ  
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.  
PEAK GATE - POWER DISSIPATION AT IGT < IGTM  
AVERAGE GATE - POWER DISSIPATION  
STORAGE TEMPERATURE RANGE  
IGTM  
PGM  
1
15  
0.1  
1
15  
1
15  
0.1  
AMP  
WATT  
WATT  
°C  
PG(AV)  
Tstg  
Toper  
0.1  
-40 to +150  
-40 to +110  
OPERATING TEMPERATURE RANGE, Tj  
°C  
ELECTRICAL CHARACTERISTICS  
AT SPECIFIED CASE TEMPERATURE  
PEAK OFF - STATE CURRENT (1)  
TC = 110° C VDRM &VRRM = MAX. RATING  
MAXIMUM ON - STATE VOLTAGE, (PEAK) AT TC = 25° C  
AND IT = RATED AMPS  
IDRM &  
IRRM  
MA  
MAX.  
VOLT  
MAX.  
0.1  
2.2  
3
0.1  
1.6  
6
0.1  
2.5  
6
VTM  
IHO  
MA  
MAX.  
DC HOLDING CURRENT, (1)AND TC = 25° C  
CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)  
FOR VD = VDRM GATE OPEN, TC = 110° C  
CRITICAL  
dv/dt  
8
5
5
V/µSEC.  
DC GATE-TRIGGER CURRENT FOR ANODE  
VOLTAGE - 6VDC, RL = 100 W AND  
AT TC = 25° C  
200  
500  
200  
500  
200  
500  
µA MAX.  
µA MAX.  
IGT  
DC GATE - TRIGGER VOLTAGE FOR ANODE VOLTAGE =  
6VDC, RL = 100 W AND AT TC = 25° C  
VOLT  
MAX.  
VGT  
T gt  
0.8  
1.2  
5
0.8  
2
0.8  
2
GATE CONTROLLED TURN-ON TIME FOR  
t D+ t R, IGT = 20 mA and TC = 25° C  
µsec.  
°C / WATT  
TYP  
R0J-C  
THERMAL RESISTANCE, JUNCTION-TO-CASE  
4.4  
4.4  
*Note:  
Device number suffix 1 = with TAB (Type 1)  
Device number suffix 2 = no TAB (Type 2)  
(1) R G – K = 1 K W  
SOLID STATE CONTROL DEVICES  
34  

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