MAXIMUM RATINGS
SYMBOL VDRM
DEVICE NUMBERS
200µA Gate
UNITS
50
S106F*
S206F*
S206A*
S206B*
S206D*
S206M*
S306F*
100
200
400
S106A*
S106B*
S106D*
S106M*
S306A*
S306B*
S306D*
S306M*
600
REPETITIVE PEAK OFF-STATE VOLTAGE (1)
GATE OPEN, AND TJ = 110° C
VDRM &
VRRM
VOLT
500µA Gate
50
S107F*
S107A*
S107B*
S107D*
S107M*
S207F*
S207A*
S207B*
S207D*
S207M*
S307F*
S307A*
S307B*
S307D*
S307M*
100
200
400
600
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION, ANGLE OF 360º
IT(RMS)
ITSM
4.0
40
6.0
60
8.0
80
AMP
AMP
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,
ONE-CYCLE, AT 50HZ OR 60HZ
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE - POWER DISSIPATION AT IGT < IGTM
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
IGTM
PGM
1
15
0.1
1
15
1
15
0.1
AMP
WATT
WATT
°C
PG(AV)
Tstg
Toper
0.1
-40 to +150
-40 to +110
OPERATING TEMPERATURE RANGE, Tj
°C
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT (1)
TC = 110° C VDRM &VRRM = MAX. RATING
MAXIMUM ON - STATE VOLTAGE, (PEAK) AT TC = 25° C
AND IT = RATED AMPS
IDRM &
IRRM
MA
MAX.
VOLT
MAX.
0.1
2.2
3
0.1
1.6
6
0.1
2.5
6
VTM
IHO
MA
MAX.
DC HOLDING CURRENT, (1)AND TC = 25° C
CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)
FOR VD = VDRM GATE OPEN, TC = 110° C
CRITICAL
dv/dt
8
5
5
V/µSEC.
DC GATE-TRIGGER CURRENT FOR ANODE
VOLTAGE - 6VDC, RL = 100 W AND
AT TC = 25° C
200
500
200
500
200
500
µA MAX.
µA MAX.
IGT
DC GATE - TRIGGER VOLTAGE FOR ANODE VOLTAGE =
6VDC, RL = 100 W AND AT TC = 25° C
VOLT
MAX.
VGT
T gt
0.8
1.2
5
0.8
2
0.8
2
GATE CONTROLLED TURN-ON TIME FOR
t D+ t R, IGT = 20 mA and TC = 25° C
µsec.
°C / WATT
TYP
R0J-C
THERMAL RESISTANCE, JUNCTION-TO-CASE
4.4
4.4
*Note:
Device number suffix 1 = with TAB (Type 1)
Device number suffix 2 = no TAB (Type 2)
(1) R G – K = 1 K W
SOLID STATE CONTROL DEVICES
34