Datasheet > S10747-0909

S10747-0909

更新时间： 2024-11-11 07:16:55

品牌	Logo	应用领域
HAMAMATSU		/
页数	文件大小	规格书
7页	481K
描述
Enhanced near-infrared sensitivity by using fully-depleted CCD technology

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S10747-0909 数据手册

CCD area image sensor

S10747-0909

Enhanced near-infrared sensitivity

by using fully-depleted CCD technology

The S10747-0909 is a back-illuminated CCD area image sensor that has signiﬁcantly improved near-infrared sensitivity and soft

X-ray detection efﬁciency. This has been achieved by using a thick silicon substrate that allows the depletion layer to be thickened

by applying a bias voltage.

Features

Applications

Quantum efﬁciency: 70% (λ=1000 nm, Ta=25 °C)

Pixel size: 24 × 24 μm

Space telescope

512 × 512 pixels

Low readout noise

Spectral response (without window)

Soft X-ray detection efficiency

(Typ. Ta=25 °C)

(Calculated data, with AR coating)

100

Back-thinned CCD

S10747-0909

200

400

600

800

1000

1200

0.1

100

Wavelength (nm)

X-ray energy (keV)

KMPDB0313EA

KMPDB0317EA

General ratings

Parameter

Specification

Pixel size

24 (H) × 24 (V) μm

532 (H) × 520 (V)

512 (H) × 512 (V)

Number of pixels

Number of active pixels

Active area

Vertical clock phase

Horizontal clock phase

Output circuit

12.288 (H) × 12.288 (V) mm

2 phases

One-stage MOSFET source follower

24-pin ceramic DIP (refer to dimensional outline)

None (temporary glass window)

Package

Window

www.hamamatsu.com

12 3 4 5 6 7

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