Datasheet > RZE002P02

RZE002P02

更新时间： 2024-10-15 07:03:51

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
5页	220K
描述
1.2V Drive Pch MOSFET

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中文翻译

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数据手册

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RZE002P02 数据手册

1.2V Drive Pch MOSFET

RZE002P02

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET

EMT3

0.7

1.6

0.3

zFeatures

0.55

1) High speed switching.

2) Small package (EMT3).

3) 1.2V drive.

(

)

(

)

( )

0.2

0.15

0.5 0.5

1.0

zApplications

Switching

(1)Source

(2)Gate

(3)Drain

Abbreviated symbol : YK

zPackage specifications

zInner circuit

Package

Taping

(3)

Type

Code

Basic ordering unit (pieces)

3000

RZE002P02

∗2

(2)

∗1

(1)

(1) Source

(2) Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(3) Drain

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

−20

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

200

°C

Drain current

∗1

I_DP

800

Continuous

Pulsed

I_S

−100

−800

150

Souce current

(Body diode)

∗1

∗2

I_SP

P_D

Total power dissipation

Channel temperature

Tch

Tstg

150

Range of storage temperature

−55 to +150

°C

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

zThermal resistance

Parameter

Symbol

Limits

833

Unit

∗

°C/W

Channel to ambient

Rth(ch-a)

∗ Each terminal mounted on a recommended land

www.rohm.com

2009.06 - Rev.A

1/4

12 3 4 5

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