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RZF013P01 PDF预览

RZF013P01

更新时间: 2024-11-24 07:03:51
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
6页 214K
描述
1.5V Drive Pch MOSFET

RZF013P01 数据手册

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1.5V Drive Pch MOSFET  
RZF013P01  
zStructure  
zDimensions (Unit : mm)  
Silicon P-channel MOSFET  
TUMT3  
zFeatures  
1) Low on-resistance.  
2) High power package.  
3) Low voltage drive. (1.5V)  
(1) Gate  
(2) Source  
(3) Drain  
Abbreviated symbol : XC  
zApplications  
zEquivalent circuit  
Switching  
(3)  
zPackaging specifications  
2  
(1)  
Package  
Taping  
TL  
Type  
Code  
1  
Basic ordering unit (pieces)  
3000  
RZF013P01  
(2)  
(1) Gate  
(2) Source  
(3) Drain  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
12  
10  
Unit  
Drain-source voltage  
VDSS  
VGSS  
ID  
V
V
Gate-source voltage  
Drain current  
Continuous  
Pulsed  
1.3  
A
1  
1  
IDP  
5.2  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.6  
5.2  
0.8  
A
ISP  
A
2  
Total power dissipation  
Channel temperature  
PD  
W
°C  
°C  
Tch  
Tstg  
150  
Range of Storage temperature  
1 Pw10µs, Duty cycle1%  
2 When mounted on a ceramic board  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Rth(ch-a) ∗  
Limits  
156  
Unit  
Channel to ambient  
When mounted on a ceramic board  
°C / W  
www.rohm.com  
c
2009.02 - Rev.A  
2009 ROHM Co., Ltd. All rights reserved.  
1/5  

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