Datasheet > RZB002P02

RZB002P02

更新时间： 2024-10-15 09:50:31

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	288K
描述
1.2V Drive Pch MOSFET

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数据手册

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RZB002P02 数据手册

1.2V Drive Pch MOSFET

RZB002P02

 Structure

 Dimensions (Unit : mm)

Silicon P-channel MOSFET

VMN3

0.22

0.16

(3)

Features

1) High speed switing.

2) Ultra small package(VMN3).

3) Ultra low voltage drive(1.2V drive).

(1)

(2)

0.37

0.17

0.35

0.6

Abbreviated symbol : YK

 Application

Switching

 Packaging specifications

 Inner circuit

(3)

Package

Taping

T2L

Type

Code

Basic ordering unit (pieces)

8000



RZB002P02

 Absolute maximum ratings (Ta = 25C)

Parameter

(1)

(2)

(1) GATE

(2) SOURCE

(3) DRAIN

Symbol

V_DSS

V_GSS

I_D

Limits

20

Unit

Drain-source voltage

Gate-source voltage

10

Continuous

200

C

Drain current

Pulsed

I_DP

I_S

800

100

Continuous

Pulsed

Source current

(Body Diode)

I_SP

800

Power dissipation

P_D

150

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

C

*2 Each terminal mounted on a recommended land.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

833

Unit

Channel to Ambient

C / W

* Each terminal mounted on a recommended land.

www.rohm.com

2010.11 - Rev.A

1/5

12 3 4 5 6

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