Datasheet > RXQ040N03

RXQ040N03

更新时间： 2024-11-21 09:40:15

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1271K
描述
4V Drive Nch MOSFET

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中文翻译

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数据手册

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RXQ040N03 数据手册

Data Sheet

4V Drive Nch MOSFET

RXQ040N03

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

TSMT6

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT6).

Abbreviated symbol : XQ

 Application

Switching

 Packaging specifications

 Inner circuit

(6)

(5)

(4)

Package

Taping

TCR

3000

○

Type

Code

∗2

Basic ordering unit (pieces)

RXQ040N03

∗1

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

(1)

(2)

(3)

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

V_DSS

V_GSS

I_D

Gate-source voltage

20

Continuous

Pulsed

4.0

Drain current

I_DP

12

Continuous

Pulsed

I_S

1.0

Source current

(Body Diode)

I_SP

Power dissipation

P_D

1.25

150

C

Channel temperature

Tch

Tstg

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to 150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

100

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2011.05 - Rev.A

1/6

12 3 4 5 6 7

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