Datasheet > RXR035N03

RXR035N03

更新时间： 2024-11-21 09:40:15

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1211K
描述
4V Drive Nch MOSFET

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中文翻译

获取价格

数据手册

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RXR035N03 数据手册

Data Sheet

4V Drive Nch MOSFET

RXR035N03

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

TSMT3

Features

(3)

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

(1)

(2)

Abbreviated symbol : XQ

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

TCL

3000

○

(3)

Type

Code

Basic ordering unit (pieces)

∗1

RXR035N03

∗2

 Absolute maximum ratings (Ta = 25C)

Parameter

(1)

(2)

(1) Gate

(2) Source

(3) Drain

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

∗1 BODY DIODE

∗2 ESD PROTECTION DIODE

Drain-source voltage

Gate-source voltage

20

Continuous

3.5

Drain current

Pulsed

I_DP

12

Continuous

Pulsed

I_S

0.8

Source current

(Body Diode)

I_SP

Power dissipation

P_D

1.0

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to 150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

125

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2011.03 - Rev.A

1/6

12 3 4 5 6 7

中文翻译

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