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RXQ040N03TCR PDF预览

RXQ040N03TCR

更新时间: 2024-11-25 19:50:39
品牌 Logo 应用领域
罗姆 - ROHM 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 1273K
描述
Power Field-Effect Transistor, 4A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN

RXQ040N03TCR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.25 W最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RXQ040N03TCR 数据手册

 浏览型号RXQ040N03TCR的Datasheet PDF文件第2页浏览型号RXQ040N03TCR的Datasheet PDF文件第3页浏览型号RXQ040N03TCR的Datasheet PDF文件第4页浏览型号RXQ040N03TCR的Datasheet PDF文件第5页浏览型号RXQ040N03TCR的Datasheet PDF文件第6页浏览型号RXQ040N03TCR的Datasheet PDF文件第7页 
Data Sheet  
4V Drive Nch MOSFET  
RXQ040N03  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
TSMT6  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TSMT6).  
Abbreviated symbol : XQ  
Application  
Switching  
Packaging specifications  
Inner circuit  
(6)  
(5)  
(4)  
Package  
Taping  
TCR  
3000  
Type  
Code  
2  
Basic ordering unit (pieces)  
RXQ040N03  
1  
(1) Drain  
(2) Drain  
(3) Gate  
(4) Source  
(5) Drain  
(6) Drain  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Drain-source voltage  
(1)  
(2)  
(3)  
Limits  
30  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
VDSS  
VGSS  
ID  
Gate-source voltage  
20  
V
Continuous  
Pulsed  
4.0  
A
Drain current  
*1  
IDP  
12  
A
Continuous  
Pulsed  
IS  
1.0  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
12  
A
Power dissipation  
PD  
1.25  
150  
W
C  
C  
Channel temperature  
Tch  
Tstg  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
100  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
2011.05 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
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