RURP640CC, RURP650CC,
RURP660CC
6A, 400V - 600V Ultrafast Dual Diodes
April 1995
Features
Package
JEDEC TO-220AB
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
The RURP640CC, RURP650CC, and RURP660CC are
Symbol
ultrafast dual diodes with soft recovery characteristics (tRR
<
55ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construc-
tion.
K
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits, reduc-
ing power loss in the switching transistors.
A1
A2
PACKAGE AVAILABILITY
PART NUMBER
RURP640CC
RURP650CC
RURP660CC
PACKAGE
TO-220AB
TO-220AB
TO-220AB
BRAND
RURP640C
RURP650C
RURP660C
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49038.
o
Absolute Maximum Ratings (per leg) T = +25 C, Unless Otherwise Specified
C
RURP640CC
RURP650CC
RURP660CC
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
400
400
6
500
500
500
6
600
600
600
6
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
o
(T = +155 C)
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
12
60
12
60
12
60
A
A
FSM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
50
10
50
10
50
10
W
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T
, T
-65 to +175
-65 to +175
-65 to +175
C
STG
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 4007
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