5秒后页面跳转
RURP650CC PDF预览

RURP650CC

更新时间: 2024-11-24 22:17:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 78K
描述
6A, 400V - 600V Ultrafast Dual Diodes

RURP650CC 数据手册

 浏览型号RURP650CC的Datasheet PDF文件第2页浏览型号RURP650CC的Datasheet PDF文件第3页浏览型号RURP650CC的Datasheet PDF文件第4页 
RURP640CC, RURP650CC,  
RURP660CC  
6A, 400V - 600V Ultrafast Dual Diodes  
April 1995  
Features  
Package  
JEDEC TO-220AB  
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . <55ns  
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175oC  
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .600V  
• Avalanche Energy Rated  
ANODE 2  
CATHODE  
ANODE 1  
CATHODE  
(FLANGE)  
• Planar Construction  
Applications  
• Switching Power Supplies  
• Power Switching Circuits  
• General Purpose  
Description  
The RURP640CC, RURP650CC, and RURP660CC are  
Symbol  
ultrafast dual diodes with soft recovery characteristics (tRR  
<
55ns). They have low forward voltage drop and are silicon  
nitride passivated ion-implanted epitaxial planar construc-  
tion.  
K
These devices are intended for use as freewheeling/clamp-  
ing diodes and rectifiers in a variety of switching power sup-  
plies and other power switching applications. Their low  
stored charge and ultrafast soft recovery minimize ringing  
and electrical noise in many power switching circuits, reduc-  
ing power loss in the switching transistors.  
A1  
A2  
PACKAGE AVAILABILITY  
PART NUMBER  
RURP640CC  
RURP650CC  
RURP660CC  
PACKAGE  
TO-220AB  
TO-220AB  
TO-220AB  
BRAND  
RURP640C  
RURP650C  
RURP660C  
NOTE: When ordering, use the entire part number.  
Formerly developmental type TA49038.  
o
Absolute Maximum Ratings (per leg) T = +25 C, Unless Otherwise Specified  
C
RURP640CC  
RURP650CC  
RURP660CC  
UNITS  
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
400  
400  
400  
6
500  
500  
500  
6
600  
600  
600  
6
V
V
V
A
RRM  
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
RWM  
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
F(AV)  
o
(T = +155 C)  
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
(Square Wave, 20kHz)  
12  
60  
12  
60  
12  
60  
A
A
FSM  
FSM  
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
(Halfwave, 1 phase, 60Hz)  
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P  
50  
10  
50  
10  
50  
10  
W
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E  
mJ  
AVL  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T  
, T  
-65 to +175  
-65 to +175  
-65 to +175  
C
STG  
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4007  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
6-55  

与RURP650CC相关器件

型号 品牌 获取价格 描述 数据表
RURP660CC INTERSIL

获取价格

6A, 400V - 600V Ultrafast Dual Diodes
RURP810 ROCHESTER

获取价格

8A, 100V, SILICON, RECTIFIER DIODE
RURP8100 ROCHESTER

获取价格

8 A, 1000 V, SILICON, RECTIFIER DIODE
RURP8100 ONSEMI

获取价格

8A,1000V,超快二极管
RURP8100 FAIRCHILD

获取价格

8A, 1000V Ultrafast Diodes
RURP8100 INTERSIL

获取价格

8A, 1000V Ultrafast Diodes
RURP8100CC INTERSIL

获取价格

8A, 1000V Ultrafast Dual Diode
RURP8100CC ROCHESTER

获取价格

8A, 1000V, SILICON, RECTIFIER DIODE, TO-220AB
RURP8100CC FAIRCHILD

获取价格

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 8A, 1000V V(RRM), Silicon, TO-220AB,
RURP810CC ROCHESTER

获取价格

3A, 100V, SILICON, RECTIFIER DIODE