Datasheet > RU1Z150S

RU1Z150S

更新时间： 2024-04-09 19:01:27

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	372K
描述
TO-263

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RU1Z150S 数据手册

RU1Z150S

El t

i l

Ch t

i ti

Electrical Characteristics (T_C=25°C Unless Otherwise Noted)

RU1Z150S

Symbol

Parameter

Test Condition

Unit

Min.

Typ.

Max.

Static Characteristics

V_GS=0V, I_DS=250µA

V_DS=150V, V_GS=0V

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

150

µA

T_J=125°C

V_DS=V_GS, I_DS=250µA

V_GS=±25V, V_DS=0V

V_GS=10V, I_DS=75A

V_GS(th)

I_GSS

Gate Threshold Voltage

2.5

4.5

±100

Gate Leakage Current

mΩ

④

R_DS(ON)

Drain-Source On-state Resistance

8.8

Diode Characteristics

④

V_SD

I_SD=75A, V_GS=0V

Diode Forward Voltage

1.2

trr

Reverse Recovery Time

I^SD=75A, dlSD/dt=100A/µs

Qrr

Reverse Recovery Charge

105

⑤

Dynamic Characteristics

V_GS=0V,V_DS=0V,F=1MHz

R_G

C_iss

C_oss

C_rss

t_d(ON)

t_r

Gate Resistance

1.5

8200

1050

615

Ω

V_GS=0V,

V_DS=75V,

Frequency=1.0MHz

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

123

190

V_DD=75V,I_DS=75A,

V_GEN=10V,R_G=25Ω

t_d(OFF)

t_f

Turn-off Delay Time

Turn-off Fall Time

⑤

Gate Charge Characteristics

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

247

V_DS=120V, V_GS=10V,

I_DS=75A

168

①Pulse width limited by safe operating area.

Notes:

②Calculated continuous current based on maximum allowable junction temperature. The package

limitation current is 75A.

③Limited by T_Jmax, I_AS=53A, V_DD= 48V, R_G= 47Ω , Starting T_J= 25°C.

④Pulse test;Pulse width≤300µs, duty cycle≤2%.

⑤Guaranteed by design, not subject to production testing.

Ruichips Semiconductor Co., Ltd

Rev. B– MAY., 2016

www.ruichips.com

123 4 5 6 7 8

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