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RU2090M PDF预览

RU2090M

更新时间: 2022-05-06 21:30:21
品牌 Logo 应用领域
锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
9页 305K
描述
N-Channel Advanced Power MOSFET

RU2090M 数据手册

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RU2090M  
N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 20V/99A,  
R
R
DS (ON) =2.3mΩ(tpy.)@VGS=10V  
DS (ON) =4mΩ(tpy.)@VGS=4.5V  
Super High Dense Cell Design  
Reliable and Rugged  
100% avalanche tested  
PDFN 5X6  
• Lead Free and Green Devices Available  
(RoHS Compliant)  
Applications  
Rectification  
Switching Application  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TC=25°C Unless Otherwise Noted)  
20  
±12  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
V
Gate-Source Voltage  
°C  
°C  
150  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
TSTG  
-55 to 150  
IS  
TC=25°C  
A
50  
Mounted on Large Heat Sink  
360  
IDP  
300μs Pulse Drain Current Tested  
TC=25°C  
TC=25°C  
A
A
99  
66  
TC=100°C  
TA=25°C  
TA=70°C  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
ID  
Continuous Drain Current(VGS=10V)  
26  
21  
66  
W
26  
PD  
Maximum Power Dissipation  
4.2  
2.7  
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– MAY., 2012  
www.ruichips.com  

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