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RU2013H

更新时间: 2022-11-12 00:34:27
品牌 Logo 应用领域
锐骏半导体 - RUICHIPS /
页数 文件大小 规格书
9页 273K
描述
N-Channel Advanced Power MOSFET

RU2013H 数据手册

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RU2013H  
N-Channel Advanced Power MOSFET  
Features  
Pin Description  
• 20V/13A,  
R
R
R
DS (ON) =13mW(Typ.) @ VGS=10V  
DS (ON) =16mW(Typ.) @ VGS=4.5V  
DS (ON) =22mW(Typ.) @ VGS=2.5V  
• Super High Dense Cell Design  
• Low On-Resistance  
Reliable and Rugged  
SOP-8  
• Lead Free and Green Available  
Applications  
DC/DC Converters  
N-Channel MOSFET  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings (TA=25°C Unless Otherwise Noted)  
20  
±12  
VDSS  
VGSS  
TJ  
Drain-Source Voltage  
V
Gate-Source Voltage  
°C  
°C  
A
150  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
TSTG  
IS  
-55 to 150  
4.5  
TA=25°C  
TA=25°C  
Mounted on Large Heat Sink  
50  
IDP  
300μs Pulse Drain Current Tested  
A
A
TA=25°C  
TA=70°C  
TA=25°C  
TA=70°C  
13  
ID  
Continuous Drain Current  
10  
3.1  
PD  
Maximum Power Dissipation  
W
2
RqJA  
40  
Thermal Resistance-Junction to Ambient  
°C/W  
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. A– AUG., 2011  
www.ruichips.com  

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