Datasheet > RU207C

RU207C

更新时间： 2024-04-09 18:59:38

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	425K
描述
SOT23-3

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RU207C 数据手册

RU207C

N-Channel Advanced Power MOSFET

Features

Pin Description

• 20V/6A,

R_{DS (ON)}=10mΩ(Typ.)@V_GS=4.5V

R_{DS (ON)}=15mΩ(Typ.)@V_GS=2.5V

• Low R_{DS (ON)}

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available (RoHS Compliant)

SOT23-3

Applications

• Power Management

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

±12

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

150

°C

T_STG

I_S

-55 to 150

1.7

T_A=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

I_DP

②

Continuous Drain Current(V_GS=4.5V)

Maximum Power Dissipation

I_D

4.5

1.25

0.75

P_D

R_JC

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

°C/W

③

100

R_JA

Drain-Source Avalanche Ratings

④

E_AS

Avalanche Energy, Single Pulsed

TBD

Ruichips Semiconductor Co., Ltd

Rev. C– AUG., 2015

www.ruichips.com

12 3 4 5 6 7 8

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