生命周期: | Obsolete | 包装说明: | QFF, TPAK196,2.5SQ,25 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.34 |
其他特性: | 15000 PLD EQUIVALENT GATES AVAILABLE | 最大时钟频率: | 100 MHz |
CLB-Max的组合延迟: | 3 ns | JESD-30 代码: | S-CQFP-F196 |
长度: | 34.29 mm | 可配置逻辑块数量: | 848 |
等效关口数量: | 18000 | 输入次数: | 168 |
逻辑单元数量: | 848 | 输出次数: | 168 |
端子数量: | 196 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 848 CLBS, 18000 GATES |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | QFF |
封装等效代码: | TPAK196,2.5SQ,25 | 封装形状: | SQUARE |
封装形式: | FLATPACK | 电源: | 5 V |
可编程逻辑类型: | FIELD PROGRAMMABLE GATE ARRAY | 认证状态: | Not Qualified |
座面最大高度: | 2.9464 mm | 子类别: | Field Programmable Gate Arrays |
标称供电电压: | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | FLAT | 端子节距: | 0.635 mm |
端子位置: | QUAD | 总剂量: | 28k Rad(Si) V |
宽度: | 34.29 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RT1460A-1CQG196B | ACTEL |
获取价格 |
Field Programmable Gate Array, 848 CLBs, 18000 Gates, 100MHz, CMOS, CQFP196, CERAMIC, CQFP | |
RT1460A-CQ196B | MICROSEMI |
获取价格 |
Field Programmable Gate Array, 848 CLBs, 12000 Gates, 85MHz, 848-Cell, CMOS, CQFP196, CERA | |
RT1460A-CQ196E | MICROSEMI |
获取价格 |
Field Programmable Gate Array, 848 CLBs, 12000 Gates, 85MHz, 848-Cell, CMOS, CQFP196, CERA | |
RT1460A-CQG196B | MICROSEMI |
获取价格 |
Field Programmable Gate Array, 848 CLBs, 12000 Gates, 85MHz, CMOS, CQFP196, CERAMIC, CQFP- | |
RT1460A-STDCQ196B | MICROSEMI |
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Field Programmable Gate Array, 848 CLBs, 18000 Gates, 85MHz, 848-Cell, CMOS, CQFP196, CERA | |
RT1460A-STDCQ196C | MICROSEMI |
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Field Programmable Gate Array, 85MHz, 848-Cell, CMOS, CQFP196, | |
RT1460A-STDCQ196E | MICROSEMI |
获取价格 |
Field Programmable Gate Array, 848 CLBs, 18000 Gates, 85MHz, 848-Cell, CMOS, CQFP196, CERA | |
RT1460B6 | CTS |
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DDR SDRAM Terminator RoHS Compliant Parts Available | |
RT1460B6TR13 | CTS |
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DDR SDRAM Terminator RoHS Compliant Parts Available | |
RT1460B6TR7 | CTS |
获取价格 |
DDR SDRAM Terminator RoHS Compliant Parts Available |