Datasheet > RSF010P03

RSF010P03

更新时间： 2024-11-05 03:35:51

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
3页	60K
描述
4V Drive Pch MOS FET

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中文翻译

获取价格

数据手册

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RSF010P03 数据手册

RSF010P03

Transistors

4V Drive Pch MOS FET

RSF010P03

zStructure

zExternal dimensions (Unit : mm)

Silicon P-channel MOS FET

TUMT3

0.85Max.

0.77

2.0

0.3

zFeatures

1) Low on-resistance.

2) High speed switching.

(3)

0~0.1

(1) (2)

0.17

0.65 0.65

1.3

(1) Gate

zApplications

Switching

(2) Source

(3) Drain

Abbreviated symbol : WX

zPackaging specifications

zInner circuit

(3)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

RSF010P03

(1)

∗2

∗1

(2)

(1) Gate

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

−30

Continuous

Drain current

Pulsed

∗1

I_DP

I_S

−0.3

−4

Source current

(Body diode)

Continuous

∗1

∗2

Pulsed

I_SP

Total power dissipation

Channel temperature

P_D

0.8

°C

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

156

Unit

∗

Channel to ambient

∗ Mounted on a ceramic board

Rth(ch-a)

°C/W

1/2

12 3

中文翻译

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