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RS1J-E3/61T PDF预览

RS1J-E3/61T

更新时间: 2024-11-14 19:46:03
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 79K
描述
Diode Switching 600V 1A 2-Pin SMA T/R

RS1J-E3/61T 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:0.65其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.25 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

RS1J-E3/61T 数据手册

 浏览型号RS1J-E3/61T的Datasheet PDF文件第2页浏览型号RS1J-E3/61T的Datasheet PDF文件第3页浏览型号RS1J-E3/61T的Datasheet PDF文件第4页 
RS1A thru RS1K  
Vishay General Semiconductor  
Surface Mount Fast Switching Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Fast switching for high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-214AC (SMA)  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
trr  
50 V to 800 V  
30 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Epoxy meets UL 94V-0 flammability rating  
150 ns, 250 ns, 500 ns  
1.3 V  
VF  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL RS1A  
RS1B  
RB  
RS1D  
RD  
RS1G  
RG  
RS1J  
RJ  
RS1K  
RK  
UNIT  
Device marking code  
RA  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
600  
420  
600  
800  
500  
800  
V
V
V
A
280  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL= 90 °C  
100  
400  
IF(AV)  
1.0  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 88707  
Revision: 11-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

RS1J-E3/61T 替代型号

型号 品牌 替代类型 描述 数据表
RS1J-E3/5AT VISHAY

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DIODE GEN PURP 600V 1A DO214AC
RS1J-E3/61T VISHAY

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