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RS1JHE3/61T PDF预览

RS1JHE3/61T

更新时间: 2024-11-16 01:00:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 85K
描述
Surface Mount Fast Switching Rectifier

RS1JHE3/61T 数据手册

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RS1A, RS1B, RS1D, RS1G, RS1J, RS1K  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Fast Switching Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Fast switching for high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
DO-214AC (SMA)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V  
VRRM  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
trr  
30 A  
150 ns, 250 ns, 500 ns  
1.3 V  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
VF  
TJ max.  
Package  
Diode variation  
150 °C  
DO-214AC (SMA)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RS1A  
RS1B  
RB  
RS1D  
RD  
RS1G  
RG  
RS1J  
RJ  
RS1K  
RK  
UNIT  
Device marking code  
RA  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
500  
800  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 90 °C  
100  
IF(AV)  
1.0  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Revision: 21-Aug-13  
Document Number: 88707  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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