RPI-579N1

更新时间： 2024-11-05 03:08:15

品牌	Logo	应用领域
罗姆 - ROHM		光电断路器开关插槽式开关输出元件 PC
页数	文件大小	规格书
2页	57K
描述
Photointerrupter, General type

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中文翻译

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技术参数
数据手册

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RPI-579N1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	7.92	Samacsys Confidence：	2
Samacsys Status：	Released	Samacsys PartID：	471930
Samacsys Pin Count：	4	Samacsys Part Category：	Undefined or Miscellaneous
Samacsys Package Category：	Other	Samacsys Footprint Name：	RPI-579N1
Samacsys Released Date：	2018-09-07 19:42:31	Is Samacsys：	N
Coll-Emtr Bkdn Voltage-Min：	30 V	配置：	SINGLE
最大暗电源：	500 nA	最大正向电流：	0.05 A
间隙大小：	5 mm	JESD-609代码：	e1
安装特点：	THROUGH HOLE MOUNT	功能数量：	1
最大通态电压：	30 V	最高工作温度：	85 °C
最低工作温度：	-25 °C	光电设备类型：	TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型：	Transistor	标称槽宽：	5 mm
表面贴装：	NO	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches：	1

RPI-579N1 数据手册

External dimensions (Unit : mm)

RPI-579N1

Photointerrupter, General type

2.35

2-φ0.8

4-φ0.8

Absolute maximum ratings (Ta=25°C)

Through hole

Parameter

Symbol

Limits

Unit

Applications

Forward current

Printers

Facsimiles

AV equipment

Reverse voltage

+0.05

−0

Power dissipation

8.95

Collector-emitter voltage

Emitter-collector voltage

Collector current

VCEO

VECO

I^C

13.8

4.5

Gap

Features

0.8

0.5

°C

1) Heat resistance (170°C).

2) Small gap (0.5mm) and good accuracy.

3) Quick response time.

4) Filter against visible ray is built-in.

5) Kinked forming.

Collector power dissipation

Operating temperature

Storage temperature

Soldering temperture

Topr

Tstg

Tsol

−25 to +85

−40 to +85

260 / 3

Optical

center

°C

∗

°C / s

∗ 1mm from the body bottom.

Electrical and optical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

1.3

−

Max.

1.6

0.5

−

Unit

Conditions

−

IF=50mA

V^R=10V

V^CE=10V

Forward voltage

(4-0.85)

4-0.4

2-0.45

µA

Reverse current

Dark current

(2.54)

(10)

ICEO

−

Peak sensitivity wavelength

Collector current

−

800

−

Notes:

1. Unspecified tolerance

shall be 0.2 .

VCE(sat)

0.5

−

V^CE=5V, IF=20mA

14(Bottom)

0.1

I^F=20mA, IC=0.1mA

0.5

−

Collector-emitter saturation voltage

2. Measurement in the bracket is

that of lead pin at base the mold.

3. Dimension in parenthesis are

show for reference.

4. Please be carefully not to receive

external disturbing light because

the top and back face emitter and

detector element isn't covered by case.

Rise time

−

µs

Cathode

Collector

Response time

V^CC=5V, IF=20mA, RL=100Ω

−

Fall time

Cut-off frequency

−

MHz

I^F=50mA

∗ Non-coherent Infrared light emitting diode used.

950

λP

Peak light emitting wavelength

VCC=5V, IC=1mA, RL=100Ω

tr tf

µs

Response time

−

Anode

Emitter

∗ This product is not designed to be protected against electromagnetic wave.

2-φ0.7 0.1

2.35 0.1

6.6 0.1

−

Maximum sensitivity wavelength

800

Electrical and optical characteristics curves

1000

−25°C

100

0°C

25°C

50°C

75°C

100

200

100

R =5kΩ

CE=30V

CE=20V

VCE=10V

=2kΩ

=1kΩ

0.1

10 20

50 100 200

500 1000 2000

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

100

−20

100

AMBIENT TEMPERATURE : Ta (°C)

DISTANCE : d (mm)

FORWARD CURRENT : IF (mA)

COLLECTOR CURRENT : Ic (µA)

AMBIENT TEMPERATURE : Ta (°C)

FORWARD VOLTAGE : VF (V)

Fig.8 Response time vs.

collector current

Fig.9 Dark current vs. ambient

temperature

Fig.1 Relative output vs. distance ( )

Fig.2 Forward current falloff

Fig.3 Forward current vs. forward voltage

Fig.7 Collector current vs. forward current

3.0

160

140

120

100

Input

VCC

100

=25mA

2.0

1.0

Input

20mA

Output

90%

10%

15mA

10mA

Output

5mA

td :

tr :

Delay time

Rise time (time for output current to rise

from 10% to 90% of peak current)

Fall time (time for output current to fall

from 90% to 10% of peak current)

40 20

20 40 60 80 100

100

tf :

COLLECTOR-EMITTER VOLTAGE : VCE

(

DISTANCE : d (mm)

AMBIENT TEMPERATURE : Ta (°C)

Fig.5 Power dissipation / collector power

dissipation vs. ambient temperature

Fig.6 Relative output vs. ambient

temperature

Fig.4 Relative output vs. distance (

)

Fig.10 Output characteristics

Fig.11 Response time measurement circuit

中文翻译

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